TrenchFET Technology P Channel MOSFET Load Switch 12 Volt PIELENST SI2305 L in SOT23 Compact Package
Key Attributes
Model Number:
SI2305-L
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-
RDS(on):
90mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Output Capacitance(Coss):
740pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
-
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
SI2305-L
Package:
SOT-23
Product Description
Product Overview
The SI2305-L is a P-Channel 12-V (D-S) MOSFET designed for load switching in portable devices and DC/DC converters. It features TrenchFET technology for enhanced performance and is housed in a compact SOT23 package.
Product Attributes
- Brand: SZPIELENST
- Origin: China (implied by WWW.SZPIELENST.COM)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -12 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | -4.1 | A | |||
| Continuous Source-Drain Diode Current | IS | -0.8 | A | |||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance Junction to Ambient | RθJA | (t≤10s) | 357 | °C/W | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -50 | +150 | °C | ||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -12 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -0.5 | -0.9 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS =±8V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-8V, VGS =0V | -1 | µA | ||
| Drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-3.5A | 0.045 | Ω | ||
| VGS =-2.5V, ID =-3A | 0.060 | |||||
| VGS =-1.8V,ID=-2.0A | 0.090 | |||||
| Forward transconductance | gfs | VDS =-5V, ID =-4.1A | 6 | S | ||
| Input capacitance | Ciss | VDS =-4V,VGS =0V,f =1MHz | 740 | pF | ||
| Output capacitance | Coss | VDS =-4V,VGS =0V,f =1MHz | 290 | |||
| Reverse transfer capacitance | Crss | VDS =-4V,VGS =0V,f =1MHz | 190 | |||
| Total gate charge | Qg | VDS =-4V,VGS =-4.5V, ID =-4.1A | 7.8 | 15 | nC | |
| VDS =-4V,VGS =-2.5V, ID =-4.1A | 4.5 | 9 | ||||
| Gate-source charge | Qgs | 1.2 | nC | |||
| Gate-drain charge | Qgd | 1.6 | nC | |||
| Gate resistance | Rg | f =1MHz | 1.4 | 7 | Ω | |
| Turn-on delay time | td(on) | VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω | 13 | 20 | ns | |
| VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω | 5 | 10 | ||||
| Rise time | tr | VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω | 35 | 53 | ns | |
| VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω | 11 | 17 | ||||
| Turn-off Delay time | td(off) | VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω | 32 | 48 | ns | |
| VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω | 22 | 33 | ||||
| Fall time | tf | VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω | 10 | 20 | ns | |
| VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω | 16 | 24 | ||||
| Continuous source-drain diode current | IS | TC=25°C | -1.4 | A | ||
| Pulse diode forward current | ISM | -10 | A | |||
| Body diode voltage | VSD | IF=-3.3A | -0.8 | -1.2 | V |
2411011350_PIELENST-SI2305-L_C41376472.pdf
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