Schottky Barrier Rectifier PJSEMI BAS70DB Featuring Fast Switching and Low Forward Voltage for Circuit
Key Attributes
Model Number:
BAS70DB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100mA
Reverse Leakage Current (Ir):
100nA@50V
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
410mV@1mA
Current - Rectified:
70mA
Mfr. Part #:
BAS70DB
Package:
DFN1006-2L
Product Description
Product Overview
The BAS70DB is a Schottky Barrier Rectifier designed for high-speed switching applications. It features low forward voltage and fast switching characteristics, making it suitable for various electronic circuits.
Product Attributes
- Brand: Pingjingsemi
- Marking Code: B7
- Package Outline: DFN1x0.6-2L
Technical Specifications
| Parameter | Symbols | Value | Unit | Conditions |
| Maximum DC Blocking Voltage | VR | 70 | V | |
| Forward Continuous Current | IF | 70 | mA | |
| Non-Repetitive Peak Forward Surge Current | IFSM | 100 | mA | at 8.3ms |
| Power Dissipation | PD | 120 | mW | |
| Thermal Resistance Junction to Ambient Air | RJA | 833 | C/W | |
| Junction Temperature | TJ | 125 | C | |
| Storage Temperature Range | TSTG | -55 to +125 | C | |
| Forward Voltage | VF | 0.41 | V | IF = 1 mA |
| Forward Voltage | VF | 1 | V | IF = 15 mA |
| Reverse Current | IR | 0.1 | A | VR = 50 V |
| Breakdown Voltage | VR(BR) | 70 | V | IR =10 A |
| Total Capacitance | CT | 2 | pF | VR = 1 V, f = 1 MHz |
| Reverse Recovery Time | Trr | 5 | ns | IF = IR = 10 mA, Irr = 0.1x IR, RL = 100 |
2410010403_PJSEMI-BAS70DB_C3000408.pdf
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