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quality NPN Transistor SOT23 Package Switching Amplifier Applications Featuring PJSEMI MMBT5551 High Voltage factory
quality NPN Transistor SOT23 Package Switching Amplifier Applications Featuring PJSEMI MMBT5551 High Voltage factory

NPN Transistor SOT23 Package Switching Amplifier Applications Featuring PJSEMI MMBT5551 High Voltage

Key Attributes
Model Number: MMBT5551
Product Custom Attributes
Mfr. Part #:
MMBT5551
Package:
SOT-23
Product Description

Product Overview

The MMBT5551 is an NPN transistor in a SOT-23 package designed for switching and AF amplifier applications. It offers robust performance with high breakdown voltages and controlled current gain.

Product Attributes

  • Brand: Pingjingsemi (implied by URL)
  • Origin: China (implied by URL and revision date format)
  • Package Type: SOT-23
  • Marking Code: G1

Technical Specifications

ParameterSymbolValueUnitConditions
Collector Base VoltageVCBO180V
Collector Emitter VoltageVCEO160V
Emitter Base VoltageVEBO6V
Collector CurrentIC600mA
Maximum Power DissipationPD350mW
Junction TemperatureTJ150
Storage Temperature RangeTSTG-55 to +150
DC Current GainHFE80--VCE = 5 V, IC = 1 mA
DC Current GainHFE80-250--VCE = 5 V, IC = 10 mA
DC Current GainHFE30--VCE = 5 V, IC = 50 mA
Collector Base Cutoff CurrentICBO50nAVCB = 120V
Emitter Base Cutoff CurrentIEBO50nAVEB = 4 V
Collector Base Breakdown VoltageV(BR)CBO180VIC = 100 A
Collector Emitter Breakdown VoltageV(BR)CEO160VIC = 1 mA
Emitter Base Breakdown VoltageV(BR)EBO6VIE = 10 A
Collector Emitter Saturation VoltageVCE(sat)0.15VIC = 10 mA, IB = 1 mA
Collector Emitter Saturation VoltageVCE(sat)0.2VIC = 50 mA, IB = 5 mA
Base Emitter Saturation VoltageVBE(sat)1VIC = 10 mA, IB = 1 mA
Base Emitter Saturation VoltageVBE(sat)1VIC = 50 mA, IB = 5 mA
Transition FrequencyFT100-300MHzVCE = 10 V, IC = 10 mA, f = 100 MHz
Output CapacitanceCob6pFVCB = 10 V, f = 1 MHz

2205071800_PJSEMI-MMBT5551_C2977363.pdf

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