Load Switch and PWM Power MOSFET PJSEMI PJM40P40TE P Channel Enhancement Mode with Low On Resistance
Key Attributes
Model Number:
PJM40P40TE
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
212pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
2.053nF@20V
Pd - Power Dissipation:
40W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
PJM40P40TE
Package:
TO-252
Product Description
Product Overview
The PJM40P40TE is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for load switch, PWM applications, and power management, offering high performance with low on-resistance and robust avalanche testing. This RoHS compliant and halogen-free component ensures reliability and environmental consciousness.
Product Attributes
- Brand: PJM
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 40 | V | |||
| Gate-Source Voltage | -VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 40 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 160 | A | ||
| Maximum Power Dissipation | PD | 40 | W | |||
| Single Pulse Avalanche Energy | EAS | Note2 | 95 | mJ | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 40 | V | ||
| Zero Gate Voltage Drain Current | -IDSS | VDS=-40V,VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | -VGS(th) | VDS=VGS,ID=-250μA | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V,ID=-15A | 9 | 12 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V,ID=-10A | 13 | 17 | mΩ | |
| Forward Transconductance | gFS | VDS=-5V,ID=-2A | 9 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-20V,VGS=0V,f=1MHz | 2053 | pF | ||
| Output Capacitance | Coss | VDS=-20V,VGS=0V,f=1MHz | 258 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-20V,VGS=0V,f=1MHz | 212 | pF | ||
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | 17 | Ω | ||
| Total Gate Charge | Qg | VDS=-20V,ID=-11A, VGS=-10V | 35 | nC | ||
| Gate-Source Charge | Qgs | 6.2 | nC | |||
| Gate-Drain Charge | Qg d | 7.3 | nC | |||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-20V, ID=-11A, VGS=-10V, RGEN=2.5Ω | 10 | nS | ||
| Turn-on Rise Time | tr | 20 | nS | |||
| Turn-off Delay Time | td(off) | 51 | nS | |||
| Turn-off Fall Time | tf | 28 | nS | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | VGS=0V,IS=-30A | 1.2 | V | ||
| Diode Forward Current | -IS | 40 | A | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RθJC | 3.1 | °C/W | |||
2407301136_PJSEMI-PJM40P40TE_C36493747.pdf
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