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quality R O SS110F Schottky barrier rectifier designed for high speed switching and circuit protection needs factory
quality R O SS110F Schottky barrier rectifier designed for high speed switching and circuit protection needs factory

R O SS110F Schottky barrier rectifier designed for high speed switching and circuit protection needs

Key Attributes
Model Number: SS110F
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
50uA@100V
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
850mV@1.0A
Current - Rectified:
1A
Mfr. Part #:
SS110F
Package:
SMAF
Product Description

Product Overview

The SS12F THRU SS120F series are surface mount Schottky barrier rectifiers designed for high-speed switching applications, circuit protection, and voltage clamping. They feature a low profile package ideal for automated placement, guardring for overvoltage protection, low power losses, and high efficiency. These diodes meet MSL level 1 per J-STD-020 with a maximum peak reflow temperature of 260.

Product Attributes

  • Brand: (Hongjiacheng)
  • Origin: Zhuhai Hongjiacheng Technology co., Ltd
  • Case: SMAF
  • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
  • Molding compound meets UL 94V-0 flammability rating
  • RoHS-compliant, halogen-free

Technical Specifications

ParameterSymbolUnitSS12FSS14FSS16FSS18FSS110FSS115FSS120F
Maximum Ratings
Maximum Repetitive Peak Reverse VoltageVRRMV20406080100150200
Maximum RMS VoltageVRMSV1428425670105140
Maximum DC blocking VoltageVDCV20406080100150200
Maximum Average Forward Rectified Current @ 60Hz sinewave, Resistance load,TL (Fig.1)IF(AV)A1.0
Non-repetitive Peak Forward Surge Current @ t=8.3ms Half-sine waveIFSMA30
Storage temperatureTstg-55 ~ +150
Junction temperatureTj-55 ~ +125
Typical Thermal ResistanceRJ-A/W70
Typical Thermal ResistanceRJ-L/W20
Electrical Characteristics (Ta=25 Unless otherwise specified)
Maximum instantaneous forward voltageIF=1.0AVFV0.550.700.850.95
Maximum DC reverse current at rated DC blocking voltageVR=VDCTA=25IR1mA0.5
Maximum DC reverse current at rated DC blocking voltageVR=VDCTA=100IR2mA0.05
Typical junction capacitance4.0V DC,1MHzCJpF11080

2506261420_R-O-SS110F_C41411770.pdf

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