Low RDS ON P Channel MOSFET PIELENST SI2333DS-L with Moisture Sensitivity Level 1 and RoHS Compliance
Key Attributes
Model Number:
SI2333DS-L
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
1 P-Channel
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
740pF
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
SI2333DS-L
Package:
SOT-23
Product Description
Product Overview
The SI2333DS-L is a P-Channel MOSFET designed for various applications. It features low RDS(ON), meets UL 94 V-0 flammability rating, and is Moisture Sensitivity Level 1 compliant. Available in a lead-free finish and RoHS compliant, it offers an operating junction temperature range of -55C to +150C. Optional halogen-free versions are available upon request.
Product Attributes
- Brand: SZPIELENST
- Certifications: UL 94 V-0 Flammability Rating, Moisture Sensitivity Level 1, RoHS Compliant
- Packaging: SOT23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Drain Current-Continuous | ID | Tamb=25C | -4.2 | A | ||
| Drain Current-Pulse | IDM | Tamb=25C | -21 | A | ||
| Power Dissipation | PD | Tamb=25C | 1.4 | W | ||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature | -55 | +150 | C | |||
| Junction to Ambient Thermal Resistance | Note 1 | 90 | C/W | |||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -20 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.5 | -0.9 | V | |
| Gate-Body Leakage Current | IGSS | VGS =10V, VDS=0V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-20V, VGS=0V | -1 | A | ||
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-2.7A | 35 | 60 | m | |
| VGS=-2.5V, ID=-2.7A | 46 | 80 | m | |||
| VGS=-1.8V, ID=-2.7A | 90 | m | ||||
| Forward Tranconductance | gFS | VDS=-5V, ID=-4.1A | 6 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-4V,VGS=-4.5V,ID=-4.1A, f=1MHz | 740 | pF | ||
| Output Capacitance | Coss | VDS=-4V,VGS=-4.5V,ID=-4.1A, f=1MHz | 290 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-4V,VGS=-4.5V,ID=-4.1A, f=1MHz | 190 | pF | ||
| Total Gate Charge | Qg | VDS=-4V,VGS=-2.5V,ID=-4.1A | 7.8 | 15 | nC | |
| Gate-Source Charge | Qgs | VDS=-4V,VGS=-4.5V,ID=-4.1A | 1.2 | nC | ||
| Gate-Drain Charge | Qgd | VDS=-4V,VGS=-4.5V,ID=-4.1A | 1.6 | nC | ||
| Gate Resistance | Rg | 1.4 | 7 | |||
| Turn-On Delay Time | td(on) | VDD=-4V,VGEN=-4.5V,RL=1.2, ID=-3.3A,RG=1 | 13 | 20 | ns | |
| Turn-On Rise Time | tr | VDD=-4V,VGEN=-4.5V,RL=1.2, ID=-3.3A,RG=1 | 35 | 53 | ns | |
| Turn-Off Delay Time | td(off) | VDD=-4V,VGEN=-4.5V,RL=1.2, ID=-3.3A,RG=1 | 32 | 48 | ns | |
| Turn-Off Fall Time | tf | VDD=-4V,VGEN=-4.5V,RL=1.2, ID=-3.3A,RG=1 | 10 | 20 | ns | |
| Turn-On Delay Time | td(on) | VDD=-4V,VGEN=-8V,RL=1.2, ID=-3.3A,RG=1 | 5 | 10 | ns | |
| Turn-On Rise Time | tr | VDD=-4V,VGEN=-8V,RL=1.2, ID=-3.3A,RG=1 | 11 | 17 | ns | |
| Turn-Off Delay Time | td(off) | VDD=-4V,VGEN=-8V,RL=1.2, ID=-3.3A,RG=1 | 22 | 33 | ns | |
| Turn-Off Fall Time | tf | VDD=-4V,VGEN=-8V,RL=1.2, ID=-3.3A,RG=1 | 16 | 24 | ns | |
| Drain-Source Body Diode Characteristics | ||||||
| Continuous Source-Drain Diode Current | IS | TC=25oC | -4.2 | A | ||
| Pulse Diode Forward Current | ISM | -10 | A | |||
| Body Diode Voltage | VSD | IF=-3.3A | -0.8 | -1.2 | V | |
2411011350_PIELENST-SI2333DS-L_C41376478.pdf
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