power management device PJSEMI PJM65H0D5NSA N Channel Enhancement Mode Power MOSFET for electronics
Key Attributes
Model Number:
PJM65H0D5NSA
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
50mA
RDS(on):
175Ω@10V,25mA
Reverse Transfer Capacitance (Crss@Vds):
600fF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
8.8pF@25V
Pd - Power Dissipation:
1.39W
Gate Charge(Qg):
800pC@10V
Mfr. Part #:
PJM65H0D5NSA
Package:
SOT-23-3
Product Description
Product Overview
The PJM65H0D5NSA is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers, and general power management applications. It features fast switching, low gate charge, low RDS(on), and low reverse transfer capacitances, making it an efficient component for various power electronics designs.
Product Attributes
- Brand: PingJingSemi
- Model: PJM65H0D5NSA
- Package: SOT-23
- Origin: China (implied by website domain)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 50 | mA | |||
| Drain Current-Pulsed | IDM | Note1 | 200 | mA | ||
| Maximum Power Dissipation | PD | 1.39 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 200 | °°C/W | ||
| Maximum Junction-to-Case | RθJC | Note2 | 90 | °°C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250µA | 650 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V | 1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250µA | 0.6 | 2.5 | V | |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=10V,ID=25mA | 140 | 175 | Ω | |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=4.5V,ID=20mA | 150 | 185 | Ω | |
| Forward Transconductance | gFS | Note3, VDS=15V,ID=20mA | 0.13 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | 8.8 | pF | ||
| Output Capacitance | Coss | 1.5 | pF | |||
| Reverse Transfer Capacitance | Crss | 0.6 | pF | |||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=350V, ID=20mA, VGS=10V,RGEN=25Ω | 3.5 | nS | ||
| Turn-on Rise Time | tr | 4.0 | nS | |||
| Turn-off Delay Time | td(off) | 10 | nS | |||
| Turn-off Fall Time | tf | 15 | nS | |||
| Total Gate Charge | Qg | VDS=350V,ID=20mA, VGS=10V | 0.8 | nC | ||
| Gate-Source Charge | Qgs | 0.09 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=50mA | 1.5 | V | ||
| Diode Forward Current | IS | Note2 | 50 | mA | ||
2412311540_PJSEMI-PJM65H0D5NSA_C42431756.pdf
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