R O BAS16W diode offering 75V repetitive peak reverse voltage and halogen free UL 94V0 rated housing
Key Attributes
Model Number:
BAS16W
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
75V
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
BAS16W
Package:
SOD-123
Product Description
Product Overview
The BAS16W is a fast switching diode designed for ultra-high speed switching applications. It features a power dissipation of 400mW, high conductance, and low reverse leakage. The diode is housed in a SOD-123 package with solder-plated terminals, compliant with MIL-STD-750 for solderability. It meets UL 94V-0 flammability rating and is RoHS-compliant and halogen-free.
Product Attributes
- Brand: Hongjiacheng Technology ()
- Origin: Zhuhai
- Certifications: RoHS-compliant, Halogen-free, UL 94V-0 flammability rating
- Case: SOD-123
- Terminals: Solder plated
Technical Specifications
| Parameter | Symbol | Unit | Value | Test Conditions |
| Maximum repetitive peak reverse voltage | VRRM | V | 75 | |
| Maximum RMS Voltage | VRMS | V | 75 | |
| Reverse Breakdown voltage | V(BR)R | V | 75 | @IR=100A |
| Maximum Average Forward Rectified Current | IF(AV) | mA | 150 | |
| Repetitive peak forward current | IFRM | mA | 300 | |
| Non-Repetitive Peak forward surge current | IFSM | A | 2.0 | @tp=1s |
| Non-Repetitive Peak forward surge current | IFSM | A | 1.0 | @tp=1s |
| Power Dissipation | Pd | mW | 400 | |
| Storage temperature | Tstg | -65 ~+150 | ||
| Junction temperature | Tj | -65 ~+150 | ||
| Typical thermal resistance | RJ-A | /W | 315 | |
| Maximum instantaneous forward voltage | VF | V | 0.745 | IF=1.0mA |
| Maximum instantaneous forward voltage | VF | V | 0.855 | IF=10mA |
| Maximum instantaneous forward voltage | VF | V | 1.0 | IF=50mA |
| Maximum instantaneous forward voltage | VF | V | 1.25 | IF=150mA |
| Reverse Leakage Current | IR1 | nA | 25 | VR=20V |
| Reverse Leakage Current | IR2 | A | 1.0 | VR=75V |
| Total capacitance | CT | pF | 2.0 | VR=0V,f=1MHz |
| Maximum reverse recovery time | Trr | ns | 4.0 | IF=IR=10mA,Irr=0.1IR, RL=100 |
2511281600_R-O-BAS16W_C53055760.pdf
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