Low Voltage Rectifier PJSEMI 1N5819WS Schottky Barrier Metal Silicon Junction with Surge Protection
Key Attributes
Model Number:
1N5819WS
Product Custom Attributes
Reverse Leakage Current (Ir):
10mA@40V
Non-Repetitive Peak Forward Surge Current:
9A
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
600mV@1A
Current - Rectified:
1A
Mfr. Part #:
1N5819WS
Package:
SOD-323
Product Description
Product Overview
The 1N5817WS-1N5819WS series are Schottky barrier rectifiers featuring a metal silicon junction for majority carrier conduction. They offer low power loss, high efficiency, and high current capability with a low forward voltage drop and high surge capability. These rectifiers are designed for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. They include guarding for overvoltage protection.
Product Attributes
- Brand: pingjingsemi
- Material: Metal silicon junction
- Package: SOD-323
Technical Specifications
| Parameter | Symbols | 1N5817WS | 1N5818WS | 1N5819WS | Units |
| Maximum Repetitive Peak Reverse Voltage | VRRM | 20 | 30 | 40 | V |
| Maximum RMS voltage | VRMS | 14 | 21 | 28 | V |
| Maximum DC Blocking Voltage | VDC | 20 | 30 | 40 | V |
| Maximum Average Forward Rectified Current | IF(AV) | 1 | A | ||
| Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC) | IFSM | 9 | A | ||
| Maximum Instantaneous Forward Voltage at 1 A | VF | 0.45 | 0.55 | 0.6 | V |
| Maximum Instantaneous Forward Voltage at 3 A | VF | 0.75 | 0.875 | 0.9 | V |
| Maximum Instantaneous Reverse Current at TA = 25C Rated DC Reverse Voltage | IR | 1 | mA | ||
| Maximum Instantaneous Reverse Current at TA = 100C Rated DC Reverse Voltage | IR | 10 | mA | ||
| Typical Junction Capacitance | CJ | 110 | pF | ||
| Storage and Operating Junction Temperature Range | TJ, Tstg | -55 ~ +150 | C | ||
2102241433_PJSEMI-1N5819WS_C440261.pdf
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