Low gate charge N channel transistor PJSEMI PJM2302NSA-S with high power capability in SOT 23 package
Key Attributes
Model Number:
PJM2302NSA-S
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
27pF
Number:
1 N-channel
Input Capacitance(Ciss):
260pF@10V
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
5nC@4.5V
Mfr. Part #:
PJM2302NSA-S
Package:
SOT-23
Product Description
Product Overview
The PJM2302NSA-S is an N-channel Enhancement Mode Field Effect Transistor in a SOT-23 package. It offers fast switching, low gate charge, and low on-state resistance (RDS(on)), providing high power and current handling capability. This device is suitable for applications such as battery protection, load switching, and power management.
Product Attributes
- Brand: Pingjingsemi
- Origin: China (implied by website domain)
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 20 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.4 | 0.75 | 1.2 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=1A | - | 45 | 80 | m |
| VGS=4.5V, ID=2A | - | 35 | 50 | m | ||
| Forward Transconductance | gFS | VDS=5V,ID=2A | - | 5 | - | S |
| Input Capacitance | Clss | VDS=10V,VGS=0V, f=1.0MHz | - | 260 | - | pF |
| Output Capacitance | Coss | - | 48 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 27 | - | pF | |
| Turn-on Delay Time | td(on) | VDD=10V, RL=3.3, VGS=4.5V,RGEN=6 | - | 2.5 | - | nS |
| Turn-on Rise Time | tr | - | 3.2 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 21 | - | nS | |
| Turn-Off Fall Time | tf | - | 3 | - | nS | |
| Total Gate Charge | Qg | VDS=10V,ID=2A, VGS=4.5V | - | 2.9 | 5 | nC |
| Gate-Source Charge | Qgs | - | 0.4 | - | nC | |
| Gate-Drain Charge | Qg d | - | 0.6 | - | nC | |
| Diode Forward Voltage | VSD | VGS=0V,IS=2A | - | - | 1.2 | V |
| Diode Forward Current | IS | Note 2 | - | - | 2 | A |
| Thermal Resistance, Junction-to-Ambient | RJA | Note 2 | - | 139 | - | /W |
2410010131_PJSEMI-PJM2302NSA-S_C411710.pdf
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