Load Switching and Battery Protection Solutions Using PJSEMI PJM30DN30DL Dual N Channel Power MOSFET
Key Attributes
Model Number:
PJM30DN30DL
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
28A
RDS(on):
9.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
136pF
Number:
2 N-Channel
Output Capacitance(Coss):
180pF
Pd - Power Dissipation:
10W
Input Capacitance(Ciss):
1.31nF
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
PJM30DN30DL
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The PJM30DN30DL is a Dual N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for applications such as load switching, battery protection, and uninterruptible power supplies. This RoHS compliant, halogen and antimony free component is 100% avalanche tested and offers low on-resistance characteristics.
Product Attributes
- Brand: PJM
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 28 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 100 | A | ||
| Maximum Power Dissipation | PD | 10 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance, Junction-to-Case | RJC | 12.5 | C/W | |||
| Single Pulse Avalanche Energy | EAS | Note2 | 39 | mJ | ||
| Electrical Characteristics (TC=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250A | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=10V,ID=15A | 9.5 | m | ||
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=4.5V,ID=10A | 14 | m | ||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | 1310 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | 180 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | 136 | pF | ||
| Total Gate Charge | Qg | VDS=15V,ID=20A , VGS=10V | 23 | nC | ||
| Gate-Source Charge | Qgs | VDS=15V,ID=20A , VGS=10V | 4.5 | nC | ||
| Gate-Drain Charge | Qgd | VDS=15V,ID=20A , VGS=10V | 5.5 | nC | ||
| Turn-on Delay Time | td(on) | VDD=15V, ID=15A, VGS=10V, RGEN=3 | 7 | nS | ||
| Turn-on Rise Time | tr | VDD=15V, ID=15A, VGS=10V, RGEN=3 | 15 | nS | ||
| Turn-off Delay Time | td(off) | VDD=15V, ID=15A, VGS=10V, RGEN=3 | 25 | nS | ||
| Turn-off Fall Time | tf | VDD=15V, ID=15A, VGS=10V, RGEN=3 | 6 | nS | ||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=15A | 1.2 | V | ||
| Diode Forward Current | IS | 28 | A | |||
2510141655_PJSEMI-PJM30DN30DL_C52117969.pdf
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