Power MOSFET PJSEMI PJM70N30DL N Channel Device Featuring 30V VDS and 70A Continuous Drain Current
Key Attributes
Model Number:
PJM70N30DL
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
70A
RDS(on):
5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 N-channel
Pd - Power Dissipation:
28W
Input Capacitance(Ciss):
2.4nF
Output Capacitance(Coss):
263pF
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
PJM70N30DL
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The PJM70N30DL is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% avalanche tested, RoHS compliant, and halogen and antimony free, making it suitable for applications requiring high reliability and environmental consciousness. This MOSFET is designed for load switching, battery protection, and uninterruptible power supply systems, offering a VDS of 30V and a continuous ID of 70A with low on-resistance.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 70 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 240 | A | ||
| Maximum Power Dissipation | PD | 28 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance, Junction-to-Case | RJC | 4.46 | C/W | |||
| Single Pulse Avalanche Energy | EAS | Note2 | 110 | mJ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A, Note2 | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=30A, Note3 | -- | -- | 5 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=20A, Note3 | -- | -- | 7 | m |
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 2400 | -- | pF |
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | -- | 263 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | -- | 200 | -- | pF |
| Total Gate Charge | Qg | VDS=15V,ID=30A, VGS=10V | -- | 42 | -- | nC |
| Gate-Source Charge | Qgs | VDS=15V,ID=30A, VGS=10V | -- | 9 | -- | nC |
| Gate-Drain Charge | Qg | VDS=15V,ID=30A, VGS=10V | -- | 10 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=15V, ID=30A, VGS=10V, RGEN=3 | -- | 9 | -- | nS |
| Turn-on Rise Time | tr | VDD=15V, ID=30A, VGS=10V, RGEN=3 | -- | 15 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=15V, ID=30A, VGS=10V, RGEN=3 | -- | 36 | -- | nS |
| Turn-off Fall Time | tf | VDD=15V, ID=30A, VGS=10V, RGEN=3 | -- | 11 | -- | nS |
| Diode Forward Voltage | VSD | VGS=0V,IS=30A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | -- | -- | 70 | A | |
| Forward Transconductance | gFS | VDS=5V,ID=2A, Note3 | -- | 8 | -- | S |
2508211600_PJSEMI-PJM70N30DL_C50387322.pdf
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