High Power P-Enhancement Mode Transistor PJSEMI PJM2301PSA for Battery Protection and Power Management
Key Attributes
Model Number:
PJM2301PSA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
140mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
55pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
405pF@10V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
PJM2301PSA
Package:
SOT-23
Product Description
Product Overview
The PJM2301PSA is a P-Enhancement Mode Field Effect Transistor designed for high power and current handling capabilities. It is a halogen-free product suitable for surface mount applications, offering advantages in battery protection, load switching, and power management scenarios. Its SOT-23 package is ideal for space-constrained designs.
Product Attributes
- Brand: Pingjingsemi
- Certifications: Halogen free
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Electrical Characteristics | -V(BR)DSS | VGS = 0 V, ID = - 250 A | 20 | V | ||
| IGSS | VDS = 0 V, VGS = 8 V | 100 | nA | |||
| VDS = - 20 V, VGS = 0 V | 1 | A | ||||
| RDS(on) | VGS = - 4.5 V, ID = - 2.8 A | 90 | 110 | m | ||
| VGS = - 2.5 V, ID = - 2 A | 110 | 140 | m | |||
| gFS | VDS = - 5 V, ID = - 2.8 A | 2 | S | |||
| Ciss | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 405 | pF | |||
| Coss | 75 | pF | ||||
| Crss | 55 | pF | ||||
| Qg | VDS = -10V, VGS= -4.5V, ID= -2.8A | 5.5 | 10 | nC | ||
| Qgs | VDS = - 10 V, VGS = - 2.5 V, ID = - 2.8 A | 3.3 | 6 | nC | ||
| Switching Characteristics | td(on) | VDD = - 10 V, RL = 10 ID = - 1 A, VGEN = - 4.5 V, RG = 1 | 20 | ns | ||
| tr | 35 | 60 | ns | |||
| td(off) | 30 | 50 | ns | |||
| tf | 10 | 20 | ns | |||
| Source-Drain Diode characteristics | -IS | 1.3 | A | |||
| -ISM | Note1 | 10 | A | |||
| -VSD | IS = - 1 A | 0.5 | 1.2 | V | ||
| -IDSS | VDS = - 20 V, VGS = 0 V | 1 | A | |||
| Absolute Maximum Ratings | -VDS | 20 | V | |||
| VGS | 12 | V | ||||
| -ID | TA =25 | 2.8 | A | |||
| -IDM | Note1 | 10 | A | |||
| PD | 1.25 | W | ||||
| TJ, TSTG | -55 to 150 | 150 | C | |||
| Thermal Characteristics | RJA | Note2 | 100 | C/W |
2410121847_PJSEMI-PJM2301PSA_C411715.pdf
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