power MOSFET PJSEMI PJM09P20SC P Channel Enhancement Mode for load switch and power management needs
Key Attributes
Model Number:
PJM09P20SC
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
153pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.315nF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
15.3nC@4.5V
Mfr. Part #:
PJM09P20SC
Package:
SOT-23-3
Product Description
Product Overview
The PJM09P20SC is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for load switch, PWM application, and power management. This RoHS and Reach compliant, Halogen and Antimony Free component offers low on-resistance and is suitable for various power switching applications.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | -ID | 9 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 30 | A | ||
| Maximum Power Dissipation | PD | 1.3 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 96 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-20V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3,VDS=VGS,ID=-250μA | 0.4 | 0.62 | 1.0 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-4.5V,ID=-6A | -- | 16 | 25 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-2.5V,ID=-6A | -- | 21 | 30 | mΩ |
| Forward Transconductance | gFS | Note3,VDS=-5V,ID=-1A | -- | 8 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | -- | 1315 | -- | pF |
| Output Capacitance | Coss | -- | 180 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 153 | -- | pF | |
| Gate Resistance | RG | VDS=0V,VGS=0V,f=1MHz | -- | 14 | -- | Ω |
| Total Gate Charge | Qg | VDS=-10V,ID=-3A, VGS=-4.5V | -- | 15.3 | -- | nC |
| Gate-Source Charge | Qgs | -- | 2.2 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 4.4 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-10V, ID=-7A, VGS=-4.5V, RGEN=2.5Ω | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | -- | 31 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 28 | -- | nS | |
| Turn-off Fall Time | tf | -- | 8 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3,VGS=0V,IS=-9A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 9 | A |
2410221617_PJSEMI-PJM09P20SC_C41784032.pdf
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