30m 650V GaN transistor RENESAS TP65H030G4PQS-TR for PV inverters and uninterruptible power supplies
Key Attributes
Model Number:
TP65H030G4PQS-TR
Product Custom Attributes
Mfr. Part #:
TP65H030G4PQS-TR
Product Description
Product Overview
The TP65H030G4PQS is a 650V, 30m Gallium Nitride (GaN) FET from Renesas' Gen IV plus platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, offering superior performance, standard drive compatibility, and enhanced reliability. Its advanced design reduces gate charge, output capacitance, crossover loss, and reverse recovery charge, enabling high-efficiency, high power density, and reliable power conversion. This GaN FET is ideal for AI datacenter and telecom power supplies, e-mobility charging, PV inverters, UPS, and BESS applications, facilitating cost-effective GaN adoption by reducing system size, weight, and costs.
Product Attributes
- Brand: Renesas
- Platform: Gen IV plus SuperGaN
- Material: Gallium Nitride (GaN)
- Packaging: TOLL (RoHS compliant and Halogen-free)
- Certifications: JEDEC-qualified, RoHS compliant, Halogen-free
Technical Specifications
| Parameter | Symbol | Condition | Minimum | Typical | Maximum | Unit |
| Drain to source voltage | VDSS | TJ = -55C to 150C | - | - | 650 | V |
| Transient drain to source voltage, non-repetitive | VDSS(TR) | spike duration < 30s, non-repetitive | - | - | 800 | V |
| Transient drain to source voltage, repetitive | VDSS(TR) | spike duration < 5s | - | - | 750 | V |
| Gate to source voltage | VGSS | -20 | - | +20 | V | |
| Maximum power dissipation | PD | TC = 25C | - | - | 192 | W |
| Continuous drain current | ID | TC = 25C | - | - | 55.7 | A |
| Continuous drain current | ID | TC = 100C | - | - | 35 | A |
| Pulsed drain current | IDM | pulse width: 10s | - | - | 230 | A |
| Operating temperature junction | TJ | -55 | - | +150 | C | |
| Storage temperature | TS | -55 | - | +150 | C | |
| Reflow soldering temperature | TSOLD | MSL3 | - | - | 260 | C |
| Junction-to-case thermal resistance | RJC | - | 0.65 | - | C/W | |
| Junction-to-ambient thermal resistance | RJA | - | 40 | - | C/W | |
| Maximum drain-source voltage | VDSS(BL) | VGS = 0V | - | - | 650 | V |
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 1mA | 3.3 | 4 | 4.8 | V |
| Gate threshold voltage temperature coefficient | VGS(th)/TJ | - | -6.5 | - | mV/C | |
| Drain-source on-resistance | RDS(on)eff | VGS = 12V, ID = 30A, TJ = 25C | - | 30 | 41 | m |
| Drain-source on-resistance | RDS(on)eff | VGS = 12V, ID = 30A, TJ = 150C | - | 62 | - | m |
| Drain-to-source leakage current | IDSS | VDS = 650V, VGS = 0V, TJ = 25C | - | 3 | 30 | A |
| Drain-to-source leakage current | IDSS | VDS = 650V, VGS = 0V, TJ = 150C | - | 20 | - | A |
| Gate-to-source forward leakage current | IGSS | VGS = 20V | - | - | 400 | nA |
| Gate-to-source reverse leakage current | IGSS | VGS = -20V | - | - | -400 | nA |
| Input capacitance | CISS | VGS = 0V, VDS = 400V, f = 1MHz | - | 1500 | - | pF |
| Output capacitance | COSS | VGS = 0V, f = 1MHz | - | 127 | - | pF |
| Reverse transfer capacitance | CRSS | VGS = 0V, f = 1MHz | - | 4.6 | - | pF |
| Output capacitance, energy related | CO(er) | VGS = 0V, VDS = 0V to 400V | - | 183 | - | pF |
| Output capacitance, time related | CO(tr) | - | 339 | - | pF | |
| Total gate charge | QG | VDS = 400V, VGS = 0V to 12V, ID = 30A | - | 24.5 | - | nC |
| Gate-source charge | QGS | - | 8.4 | - | nC | |
| Gate-drain charge | QGD | - | 6.6 | - | nC | |
| Output charge | QOSS | VGS = 0V, VDS = 0V to 400V | - | 135 | - | nC |
2512051033_RENESAS-TP65H030G4PQS-TR_C46642671.pdf
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