High Current Dual N Channel MOSFET PJSEMI PJM8205DNSG SOT 23 6 with 20V Drain Source Voltage Rating
Key Attributes
Model Number:
PJM8205DNSG SOT-23-6
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
64pF
Number:
2 N-Channel
Output Capacitance(Coss):
125pF
Input Capacitance(Ciss):
550pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
60nC@4V
Mfr. Part #:
PJM8205DNSG SOT-23-6
Package:
SOT-23-6
Product Description
Product Overview
The PJM8205DNSG is a Dual N-Channel Enhancement Mode Power MOSFET featuring excellent RDS(on) and low gate charge due to its advanced trench process technology. It offers high power and current handling capabilities, with key specifications including VDS= 20V and ID= 5A, and RDS(on)< 25m @VGS= 4.5V. This MOSFET is designed for efficient power management applications.
Product Attributes
- Brand: Pingjingsemi
- Marking Code: 8205
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Drain Current-Continuous | ID | 5 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 25 | A | ||
| Maximum Power Dissipation | PD | 1.25 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 100 | C/W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250A | 0.5 | 0.7 | 1.2 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=5A | 20 | 25 | m | |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=2.5V,ID=4A | 25 | 32 | m | |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=5A | 10 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | 550 | pF | ||
| Output Capacitance | Coss | 125 | pF | |||
| Reverse Transfer Capacitance | Crss | 64 | pF | |||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=10V, ID=5A,VGS=4V,RGEN=10 | 9 | nS | ||
| Turn-on Rise Time | tr | 10 | nS | |||
| Turn-off Delay Time | td(off) | 32 | nS | |||
| Turn-off Fall Time | tf | 24 | nS | |||
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=10V,ID=5A,VGS=4.5V | 9.5 | nC | ||
| Gate-Source Charge | Qgs | 2.1 | nC | |||
| Gate-Drain Charge | Qg | 1.4 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=5A | 0.8 | 1.2 | V | |
| Diode Forward Current | IS | Note2 | 5 | A | ||
2111101730_PJSEMI-PJM8205DNSG-SOT-23-6_C2917199.pdf
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