P Channel Enhancement Mode MOSFET PJSEMI PJM12P30PA with Excellent Thermal Performance and Low RDSon
Key Attributes
Model Number:
PJM12P30PA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
RDS(on):
10.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
180pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.8nF@15V
Pd - Power Dissipation:
3W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
PJM12P30PA
Package:
SOP-8
Product Description
Product Overview
The PJM12P30PA is a P-Channel Enhancement Mode Power MOSFET designed for power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. It features a high-density cell design for ultra-low RDS(on) and an excellent package for good heat dissipation. Key specifications include VDS of -30V, ID of -12A, and RDS(on) < 10.5m @VGS= -10V.
Product Attributes
- Brand: PingJingSemi
- Revision: 5.0 Oct-2022
- Marking Code: 4407
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | -VGS | 20 | V | |||
| Drain Current-Continuous | -ID | 12 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 48 | A | ||
| Maximum Power Dissipation | PD | 3 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Maximum Junction-to-Case | RJC | Note2 | 41.7 | C/W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3,VDS=VGS,ID=-250A | 1 | -- | 3 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-10V,ID=-12A | -- | 8.5 | 10.5 | m |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-4.5V,ID=-10A | -- | 10 | 12 | m |
| Forward Transconductance | gFS | Note3,VDS=-5V,ID=-10A | 20 | -- | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | -- | 1800 | -- | pF |
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1MHz | -- | 220 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1MHz | -- | 180 | -- | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V,VGS=-10V ID=-10A, RGEN=3 | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | VDD=-15V,VGS=-10V ID=-10A, RGEN=3 | -- | 9 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-15V,VGS=-10V ID=-10A, RGEN=3 | -- | 26 | -- | nS |
| Turn-off Fall Time | tf | VDD=-15V,VGS=-10V ID=-10A, RGEN=3 | -- | 11 | -- | nS |
| Total Gate Charge | ||||||
| Gate Charge | Qg | VDS=-15V,VGS=-10V ID=-10A | -- | 25 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-15V,VGS=-10V ID=-10A | -- | 4 | -- | nC |
| Gate-Drain Charge | Qg | VDS=-15V,VGS=-10V ID=-10A | -- | 6 | -- | nC |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3,VGS=0V,IS=-12A | -- | -- | 1.5 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 12 | A |
2405221106_PJSEMI-PJM12P30PA_C22438609.pdf
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