PANJIT PJD14P06A AU L2 000A1 60V P Channel MOSFET with low RDS ON and green molding compound IEC 61249
Key Attributes
Model Number:
PJD14P06A-AU_L2_000A1
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.2A;14A
RDS(on):
110mΩ@10V,6A
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
2.5V
Number:
1 P-Channel
Input Capacitance(Ciss):
785pF@30V
Pd - Power Dissipation:
2W;40W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
PJD14P06A-AU_L2_000A1
Package:
TO-252AA
Product Description
Product Overview
The PPJD14P06A-AU is a 60V P-Channel Enhancement Mode MOSFET designed for high-speed switching applications. It offers low RDS(ON), low gate charge, and improved dv/dt capability, making it suitable for various power management solutions. This MOSFET is AEC-Q101 qualified and compliant with EU RoHS 2.0.
Product Attributes
- Brand: Panjit
- Product Code: PPJD14P06A-AU
- Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, Green molding compound as per IEC 61249 standard
- Material: Lead free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | +20 | V | |||
| Continuous Drain Current | ID | TC=25C (Note 4) | -14 | A | ||
| TC=100C (Note 4) | -9 | A | ||||
| Pulsed Drain Current | IDM | TC=25C (Note 1) | -42 | A | ||
| Power Dissipation | PD | TC=25C (Note 4) | 40 | W | ||
| TC=100C (Note 4) | 16 | W | ||||
| Continuous Drain Current | ID | TA=25C (Note 4) | -3.2 | A | ||
| TA=70C (Note 4) | -2.5 | A | ||||
| Power Dissipation | PD | TA=25C (Note 4) | 2.0 | W | ||
| TA=70C (Note 4) | 1.3 | W | ||||
| Single Pulse Avalanche Energy | EAS | (Note 6) | 20 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | C | ||
| Junction to Case Thermal Resistance | RJC | (Note 4,5) | 3.1 | C/W | ||
| Junction to Ambient Thermal Resistance | RJA | (Note 4,5) | 62.5 | C/W | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=-250uA | -60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250uA | -1 | -1.7 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS@-10V, ID@-6A | 87 | 110 | m | |
| VGS@-4.5V, ID@-3A | 110 | 130 | m | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V,VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=+20V,VDS=0V | +100 | nA | ||
| Total Gate Charge | Qg | VDS=-30V, ID=-4A, VGS=-10V (Note 2,3) | 10 | nC | ||
| Gate-Source Charge | Qgs | 1.6 | ||||
| Gate-Drain Charge | Qg | 3 | ||||
| Input Capacitance | Ciss | VDS=-30V, VGS=0V, f=1MHz | 785 | pF | ||
| Output Capacitance | Coss | 175 | ||||
| Reverse Transfer Capacitance | Crss | 112 | ||||
| Turn-On Delay Time | td(on) | VDS=-30V,RL=30, VGS=-10V, RG=6.2 (Note 2,3) | 8 | ns | ||
| Turn-On Rise Time | tr | 15 | ||||
| Turn-Off Delay Time | td(off) | 43 | ||||
| Turn-Off Fall Time | tf | 8.4 | ||||
| Drain-Source Diode Forward Current | IS | -14 | A | |||
| Drain-Source Diode Reverse Recovery Time | trr | IS=-1A,VGS=0V | 0.76 | 1 | V |
Notes:
- Pulse width<300us, Duty cycle<2%.
- Essentially independent of operating temperature typical characteristics.
- Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C.
- The maximum current rating is package limited.
- RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Mounted on a 1 inch with 2oz. square pad of copper.
- L=0.1mH, IAS=-20A, VGS=-10V, VDS=-25V, RG=25 ohm.
- Guaranteed by design, not subject to production testing.
2411011532_PANJIT-PJD14P06A-AU-L2-000A1_C7327870.pdf
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