RENESAS RJH65T14DPQ-A0 T0 650V 50A IGBT with trench gate technology and built in fast recovery diode
Key Attributes
Model Number:
RJH65T14DPQ-A0#T0
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
125ns
Td(on):
38ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
34pF
Input Capacitance(Cies):
1.75nF
Gate Charge(Qg):
80nC@15V
Pulsed Current- Forward(Ifm):
100A
Output Capacitance(Coes):
69pF
Reverse Recovery Time(trr):
250ns
Switching Energy(Eoff):
1.2mJ
Turn-On Energy (Eon):
1.3mJ
Mfr. Part #:
RJH65T14DPQ-A0#T0
Package:
TO-247AC-3
Product Description
RJH65T14DPQ-A0 650V - 50A - IGBT
The RJH65T14DPQ-A0 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) optimized for current resonance applications such as induction heating and microwave ovens. It features a low collector-to-emitter saturation voltage (VCE(sat)) of 1.45V typ., a built-in fast recovery diode, and utilizes trench gate and thin wafer technology for enhanced performance.
Product Attributes
- Brand: Renesas
- Package Code: PRSS0003ZH-A (TO-247A)
Technical Specifications
| Item | Symbol | Ratings | Unit | Test Conditions | ||
| Absolute Maximum Ratings | ||||||
| Collector to emitter voltage | VCES | 650 | V | |||
| Gate to emitter voltage | VGES | ±30 | V | |||
| Collector current | IC Note1 | 100 | A | Tc = 25 °C | ||
| 50 | A | Tc = 100 °C | ||||
| Collector peak current | iC(peak) Note1 | 180 | A | |||
| Collector to emitter diode Forward current | IDF | 40 | A | Tc = 25 °C | ||
| 20 | A | Tc = 100 °C | ||||
| Collector to emitter diode forward peak current | iDF(peak) Note2 | 100 | A | |||
| Collector dissipation | PC | 250 | W | |||
| Junction to case thermal impedance (IGBT) | θj-c Note3 | 0.6 | °C/W | |||
| Junction to case thermal impedance (Diode) | θj-cd Note3 | 1.33 | °C/W | |||
| Junction temperature | Tj Note4 | 175 | °C | |||
| Storage temperature | Tstg | –55 to +150 | °C | |||
| Electrical Characteristics | ||||||
| Zero gate voltage collector current | ICES | – | 100 | μA | VCE = 650 V, VGE = 0 V | |
| Gate to emitter leak current | IGES | – | ±1 | μA | VGE = ±30 V, VCE = 0 V | |
| Gate to emitter cutoff voltage | VGE(off) | 4 | – | 7 | V | VCE = 10 V, IC = 1 mA |
| Collector to emitter saturation voltage | VCE(sat) | – | 1.45 | 1.75 | V | IC = 50 A, VGE = 15 V Note5 |
| Input capacitance | Cies | — | 1750 | — | pF | VCE = 25 V, VGE = 0 V, f = 1 MHz |
| Output capacitance | Coes | — | 69 | — | pF | |
| Reveres transfer capacitance | Cres | — | 34 | — | pF | |
| Total gate charge | Qg | — | 80 | — | nC | VGE = 15 V, VCE = 300 V, IC = 50 A |
| Gate to emitter charge | Qge | — | 15 | — | nC | |
| Gate to collector charge | Qgc | — | 35 | — | nC | |
| Switching Characteristics (Tc = 25 °C) | ||||||
| Turn-on delay time | td(on) | — | 38 | — | ns | VCC = 400 V, VGE = 15 V, IC = 50 A, Rg = 10 Ω, Inductive load |
| Rise time | tr | — | 30 | — | ns | |
| Turn-off delay time | td(off) | — | 125 | — | ns | |
| Fall time | tf | — | 115 | — | ns | |
| Turn-on loss energy | Eon | — | 1.3 | — | mJ | |
| Turn-off loss energy | Eoff | — | 1.2 | — | mJ | |
| Total switching energy | Etotal | — | 2.5 | — | mJ | |
| Switching Characteristics (Tc = 150 °C) | ||||||
| Turn-on delay time | td(on) | — | 38 | — | ns | VCC = 400 V, VGE = 15 V, IC = 50 A, Rg = 10 Ω, Inductive load |
| Rise time | tr | — | 30 | — | ns | |
| Turn-off delay time | td(off) | — | 130 | — | ns | |
| Fall time | tf | — | 135 | — | ns | |
| Turn-on loss energy | Eon | — | 1.45 | — | mJ | |
| Turn-off loss energy | Eoff | — | 1.45 | — | mJ | |
| Total switching energy | Etotal | — | 2.90 | — | mJ | |
| Tail loss | Etail | — | 560 | — | μJ | VCC = 300 V, VGE = 20 V, IC = 50 A, Rg = 15 Ω, Tc = 125 °C |
| C-E Diode Characteristics | ||||||
| C-E diode forward voltage | VECF | — | 1.2 | 1.6 | V | IF = 20 A Note5 |
| C-E diode reverse recovery time | trr | — | 250 | — | ns | IF = 20 A, diF/dt = –300 A/μs |
2205111530_RENESAS-RJH65T14DPQ-A0-T0_C3014313.pdf
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