P Channel MOSFET PJSEMI PJM3401JPSC featuring moisture sensitivity level 3 and halogen free construction
Key Attributes
Model Number:
PJM3401JPSC
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
78mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
53pF
Number:
1 P-Channel
Input Capacitance(Ciss):
443pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
8.5nC@10V
Mfr. Part #:
PJM3401JPSC
Package:
SOT-23-3
Product Description
Product Overview
The PJM3401JPSC is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is halogen and antimony free and has a Moisture Sensitivity Level 3. This MOSFET is suitable for load switch and PWM applications, offering VDS=-30V, ID=-4.1A, and low RDS(on) values at specified gate-source voltages.
Product Attributes
- Brand: PingJingSemi
- Origin: China
- Material: Halogen and Antimony Free
- Certifications: Moisture Sensitivity Level 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | -ID | 4.1 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1.4 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 89 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3,VDS=VGS,ID=-250μA | 0.7 | 0.95 | 1.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-10V,ID=-4.1A | -- | 48 | 60 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-4.5V,ID=-3A | -- | 54 | 78 | mΩ |
| Forward Transconductance | gFS | Note3,VDS=-5V,ID=-1A | -- | 6 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | -- | 443 | -- | pF |
| Output Capacitance | Coss | -- | 64.5 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 53 | -- | pF | |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 200 | -- | Ω |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V,ID=-1A, VGS=-10V,RGEN=2.5Ω | -- | 7 | -- | nS |
| Turn-on Rise Time | tr | -- | 3 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 30 | -- | nS | |
| Turn-off Fall Time | tf | -- | 12 | -- | nS | |
| Total Gate Charge | Qg | VDS=-15V, ID=-4.2A,VGS=-10V | -- | 8.5 | -- | nC |
| Gate-Source Charge | Qgs | -- | 1.8 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 2.7 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3,VGS=0V,IS=-4.1A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 4.1 | A |
2409302003_PJSEMI-PJM3401JPSC_C41348047.pdf
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