Low leakage current MOSFET PANJIT 2N7002KW R1 00001 suitable for solid state relays and driver circuits
Key Attributes
Model Number:
2N7002KW_R1_00001
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
35pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
2N7002KW_R1_00001
Package:
SOT-323
Product Description
2N7002KW N-Channel Enhancement Mode MOSFET
The 2N7002KW is an N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in off-condition and is specially designed for battery-operated systems. This ESD-protected device is suitable for applications such as solid-state relays, drivers for relays, displays, lamps, solenoids, and memories.
Product Attributes
- Certifications: EU RoHS 2011/65/EU directive compliant, Green molding compound as per IEC61249 Std. (Halogen Free)
- ESD Protection: 2KV HBM
Technical Specifications
| Parameter | Symbol | Limit | Units | Notes |
| Drain-Source Breakdown Voltage | BV DSS | 60 | V | V GS=0V, ID=10uA |
| Gate Threshold Voltage | V GS (th) | 1 - 2.5 | V | V DS=V GS, ID=250uA |
| Drain-Source On-State Resistance | R DS (on) | - - 4.0 | VGS=4.5V, I D=200mA | |
| Drain-Source On-State Resistance | R DS (on) | - - 3.0 | VGS@10V,IDS@500mA | |
| Zero Gate Voltage Drain Current | IDSS | - - 1 | uA | VDS=60V, VGS=0V |
| Gate Body Leakage | IGSS | - - +10 | uA | V GS=+20V, V DS=0V |
| Forward Transconductance | g fS | 100 - - | mS | V DS=15V, ID=250mA |
| Total Gate Charge | Q g | - - 0.8 | nC | V DS=15V, ID=200mA, VGS=4.5V |
| Turn-On Delay Time | t on | - - 20 | ns | VDD=30V, RL=150, ID=200mA, VGEN=10V, RG=10 |
| Turn-Off Delay Time | t off | - - 40 | ns | VDD=30V, RL=150, ID=200mA, VGEN=10V, RG=10 |
| Input Capacitance | C iss | - - 35 | pF | V DS=25V, V GS=0V, f=1.0MHZ |
| Output Capacitance | C oss | - - 10 | pF | V DS=25V, V GS=0V, f=1.0MHZ |
| Reverse Transfer Capacitance | C rss | - - 5 | pF | V DS=25V, V GS=0V, f=1.0MHZ |
| Diode Forward Voltage | V SD | - 0.82 1.3 | V | IS=200mA, V GS=0V |
| Continuous Diode Forward Current | Is | - - 115 | mA | |
| Pulsed Diode Forward Current | IsM | - - 800 | mA | |
| Continuous Drain Current | ID | 115 | mA | Maximum DC current limited by the package |
| Pulsed Drain Current | IDM | 800 | mA | Pulse width<300us, Duty cycle<2% |
| Maximum Power Dissipation | P D | 200 | mW | TA=25 OC |
| Maximum Power Dissipation | P D | 120 | mW | TA=75 OC |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to +150 | OC | |
| Junction-to Ambient Thermal Resistance(PCB mounted) | RJA | 625 | OC/W | Surface mounted on FR4 board, t < 10 sec |
2410121618_PANJIT-2N7002KW-R1-00001_C313495.pdf
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