N Channel Enhancement Mode MOSFET PJSEMI PJM13N30PA with Low RDS on and 13A Continuous Drain Current
Key Attributes
Model Number:
PJM13N30PA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
13A
RDS(on):
18mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
119pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
3.5W
Input Capacitance(Ciss):
850pF@15V
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
PJM13N30PA
Package:
SOP-8
Product Description
Product Overview
The PJM13N30PA is an N-Channel Enhancement Mode Power MOSFET designed for load switching, PWM applications, and power management. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, as well as Halogen and Antimony Free. This MOSFET offers a VDS of 30V and a continuous ID of 13A, with low RDS(on) values of <12m at VGS=10V and <18m at VGS=4.5V.
Product Attributes
- Brand: Pingjing Semiconductor
- Model: PJM13N30PA
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Technology: Advanced Trench Technology
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 13 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 52 | A | ||
| Single Pulsed Avalanche Energy | EAS | Note4 | 35.7 | mJ | ||
| Maximum Power Dissipation | PD | 3.5 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | Note2 | 35.7 | °C/W | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250µA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250µA | 1.0 | 1.4 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=13A | -- | 8 | 12 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=10A | -- | 12 | 18 | mΩ |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=1A | -- | 6 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 850 | -- | pF |
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | -- | 142 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | -- | 119 | -- | pF |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 1.6 | -- | Ω |
| Total Gate Charge | Qg | VDS=15V,ID=6A, VGS=10V | -- | 19 | -- | nC |
| Gate-Source Charge | Qgs | VDS=15V,ID=6A, VGS=10V | -- | 6.3 | -- | nC |
| Gate-Drain Charge | Qgd | VDS=15V,ID=6A, VGS=10V | -- | 4.5 | -- | nC |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=15V, ID=13A, VGS=10V,RGEN=3Ω | -- | 6 | -- | nS |
| Turn-on Rise Time | tr | VDD=15V, ID=13A, VGS=10V,RGEN=3Ω | -- | 5 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=15V, ID=13A, VGS=10V,RGEN=3Ω | -- | 25 | -- | nS |
| Turn-off Fall Time | tf | VDD=15V, ID=13A, VGS=10V,RGEN=3Ω | -- | 7 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=13A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 13 | A |
2409302136_PJSEMI-PJM13N30PA_C22438610.pdf
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