Power Switching MOSFET PJSEMI PJM05N60SQ N Channel Enhancement Mode with Advanced Trench Technology
Key Attributes
Model Number:
PJM05N60SQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Number:
1 N-channel
Output Capacitance(Coss):
87pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
870pF
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
PJM05N60SQ
Package:
SOT-89
Product Description
Product Overview
The PJM05N60SQ is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It offers low on-resistance and is designed for power switching applications, including Uninterruptible Power Supplies (UPS). This component is RoHS and Reach Compliant, and is Halogen and Antimony Free, with a Moisture Sensitivity Level 1.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 5 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 104 | °°C/W | ||
| Electrical Characteristics (Ta=25°C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | -- | 1 | μA | |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | ±100 | nA | |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250μA | 1.2 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=5A | -- | 45 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=5A | -- | 55 | mΩ | |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=1A | 4 | -- | S | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | 870 | -- | pF | |
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | 87 | -- | pF | |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | 70 | -- | pF | |
| Total Gate Charge | Qg | VDS=30V,ID=4.5A,VGS=10V | 14 | -- | nC | |
| Gate-Source Charge | Qgs | VDS=30V,ID=4.5A,VGS=10V | 2.9 | -- | nC | |
| Gate-Drain Charge | Qg d | VDS=30V,ID=4.5A,VGS=10V | 5.2 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=30V,ID=2A,VGS=10V,RGEN=3Ω,RL=6.7Ω | 5 | -- | nS | |
| Turn-on Rise Time | tr | VDD=30V,ID=2A,VGS=10V,RGEN=3Ω,RL=6.7Ω | 2.6 | -- | nS | |
| Turn-off Delay Time | td(off) | VDD=30V,ID=2A,VGS=10V,RGEN=3Ω,RL=6.7Ω | 16.1 | -- | nS | |
| Turn-off Fall Time | tf | VDD=30V,ID=2A,VGS=10V,RGEN=3Ω,RL=6.7Ω | 2.3 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=5A | -- | 1.2 | V | |
| Diode Forward Current | IS | Note2 | -- | 5 | A | |
2411191726_PJSEMI-PJM05N60SQ_C42388545.pdf
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