Power MOSFET PJSEMI PJM6801DPSG Dual P Channel Enhancement Mode device optimized for load switching and PWM control
Key Attributes
Model Number:
PJM6801DPSG
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF@15V
Number:
2 P-Channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
880pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
8.5nC@10V
Mfr. Part #:
PJM6801DPSG
Package:
SOT-23-6
Product Description
Product Overview
The PJM6801DPSG is a Dual P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features excellent RDS(on) and low gate charge, making it suitable for load switching and PWM applications. This MOSFET offers robust performance with a VDS of -30V and continuous ID of -4.1A.
Product Attributes
- Brand: Pingjing Semiconductor
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Drain Current-Continuous | -ID | 4.1 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 30 | A | ||
| Maximum Power Dissipation | PD | 1.4 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance, Junction-to-Ambient | RJA | Note2 | 89 | C/W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3, VDS=VGS,ID=-250A | 0.6 | 1 | 1.4 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-10V,ID=-3A | -- | 45 | 60 | m |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-4.5V,ID=-2A | -- | 55 | 80 | m |
| Forward Transconductance | gFS | Note3, VDS=-5V,ID=-4A | -- | 10 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | -- | 880 | -- | pF |
| Output Capacitance | Coss | VDS=-15V,VGS=0V,f=1MHz | -- | 105 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V,f=1MHz | -- | 65 | -- | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-4.1A, VGS=-10V,RGEN=6 | -- | 7 | -- | nS |
| Turn-on Rise Time | tr | VDD=-15V, ID=-4.1A, VGS=-10V,RGEN=6 | -- | 3 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-15V, ID=-4.1A, VGS=-10V,RGEN=6 | -- | 30 | -- | nS |
| Turn-off Fall Time | tf | VDD=-15V, ID=-4.1A, VGS=-10V,RGEN=6 | -- | 12 | -- | nS |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=-15V,ID=-4.1A, VGS=-4.5V | -- | 8.5 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-15V,ID=-4.1A, VGS=-4.5V | -- | 1.8 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=-15V,ID=-4.1A, VGS=-4.5V | -- | 2.7 | -- | nC |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3, VGS=0V,IS=-4.1A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 4.1 | A |
2411121111_PJSEMI-PJM6801DPSG_C41413540.pdf
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