N Channel Enhancement Mode MOSFET PJSEMI PJM05N40SC with Ultra Low RDSon and 40V Drain Source Voltage
Key Attributes
Model Number:
PJM05N40SC
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-40℃~+150℃
RDS(on):
45mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
68pF
Number:
1 N-channel
Output Capacitance(Coss):
92pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
490pF
Gate Charge(Qg):
5.2nC@10V
Mfr. Part #:
PJM05N40SC
Package:
SOT-23-3
Product Description
PJM05N40SC N-Channel Enhancement Mode Power MOSFET
The PJM05N40SC is an N-Channel Enhancement Mode Power MOSFET designed for load switching and PWM applications, offering high-density cell design for ultra-low RDS(on). It features a VDS of 40V and an ID of 5A, with RDS(on) < 45m @VGS=10V.
Product Attributes
- Brand: PingJingSemi
- Package: SOT-23-3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 5 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 104 | C/W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250A | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=5A | 30 | 45 | m | |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=3A | 40 | 60 | m | |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=1A | 5 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V,VGS=0V,f=1MHz | 490 | pF | ||
| Output Capacitance | Coss | VDS=20V,VGS=0V,f=1MHz | 92 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=20V,VGS=0V,f=1MHz | 68 | pF | ||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=20V,RL=2, VGS=10V,RGEN=3 | 13 | nS | ||
| Turn-on Rise Time | tr | VDD=20V,RL=2, VGS=10V,RGEN=3 | 52 | nS | ||
| Turn-off Delay Time | td(off) | VDD=20V,RL=2, VGS=10V,RGEN=3 | 17 | nS | ||
| Turn-off Fall Time | tf | VDD=20V,RL=2, VGS=10V,RGEN=3 | 10 | nS | ||
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=20V,ID=3.5A, VGS=10V | 5.2 | nC | ||
| Gate-Source Charge | Qgs | VDS=20V,ID=3.5A, VGS=10V | 0.9 | nC | ||
| Gate-Drain Charge | Qg d | VDS=20V,ID=3.5A, VGS=10V | 1.3 | nC | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=5A | 1.2 | V | ||
| Diode Forward Current | IS | Note2 | 5 | A | ||
2410122006_PJSEMI-PJM05N40SC_C41348041.pdf
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