150 volt 20 amp diode POWER INTEGRATIONS LQA20N150C from Qspeed family ideal for AC DC and DC DC applications
Key Attributes
Model Number:
LQA20N150C
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
350A
Reverse Leakage Current (Ir):
500uA
Diode Configuration:
1 Pair Common Cathode
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
150V
Voltage - Forward(Vf@If):
1.15V@10A
Current - Rectified:
10A
Mfr. Part #:
LQA20N150C
Package:
TO-252
Product Description
Qspeed Family 150 V, 20 A Common-Cathode Diode
This device boasts the lowest QRR of any 150 V Silicon diode, leading to increased efficiency, reduced EMI, and the elimination of snubbers. It is ideal for AC/DC and DC/DC output rectification, output and freewheeling diodes, motor drive circuits, and DC-AC inverters. Its features include low QRR, low IRRM, low tRR, high dIF/dt capability, and soft recovery, offering benefits such as increased efficiency, elimination of snubber circuits, reduced EMI filter component size and count, and enabling extremely fast switching.
Product Attributes
- Brand: Qspeed
- Family: Qspeed
- RoHS Compliant: Yes
- Plating: Lead-free
- Mold Compound: Green
- Halogen Free: Yes (per IEC 61249-2-21)
Technical Specifications
| Part Number | IF(AVG) per diode | VRRM | QRR (Typ at 125 C) | IRRM (Typ at 125 C) | Softness tb/ta (Typ at 125 C) | Package |
|---|---|---|---|---|---|---|
| LQA20T150C | 10 A | 150 V | 27.8 nC | 1.66 A | 0.59 | TO-220AB |
| LQA20N150C | 10 A | 150 V | 27.8 nC | 1.66 A | 0.59 | TO-252 DPAK |
2401261243_POWER-INTEGRATIONS-LQA20N150C_C568309.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
