Power MOSFET PJSEMI PJMG10H08NTE Featuring 100V Maximum Voltage and 32W Power Dissipation Capability
Key Attributes
Model Number:
PJMG10H08NTE
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Pd - Power Dissipation:
32W
Input Capacitance(Ciss):
201pF
Gate Charge(Qg):
4nC@10V
Mfr. Part #:
PJMG10H08NTE
Package:
TO-252
Product Description
Product Overview
The PJMG10H08NTE is an N-Channel Enhancement Mode Power MOSFET featuring advanced Split Gate Trench Technology. It is designed for load switching, PWM applications, and power management, offering high performance with a VDS of 100V and ID of 8A. This MOSFET is 100% avalanche tested and RoHS compliant, making it a reliable choice for various electronic designs.
Product Attributes
- Brand: Pingjing Semiconductor (implied by URL)
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 8 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 32 | A | ||
| Maximum Power Dissipation | PD | 32 | W | |||
| Single pulse avalanche energy | EAS | Note2 | 6.25 | mJ | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance, Junction-to-Case | RθJC | 3.9 | °C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=3A | -- | 86 | 100 | mΩ |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=1A | -- | 112 | 150 | mΩ |
| Forward Transconductance | gFS | VDS=5V,ID=2A | -- | 3.7 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 201 | -- | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V,f=1MHz | -- | 76.5 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f=1MHz | -- | 14 | -- | pF |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 9 | -- | Ω |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS=50V,ID=3A, VGS=10V | -- | 4 | -- | nC |
| Gate-Source Charge | Qgs | VDS=50V,ID=3A, VGS=10V | -- | 0.9 | -- | nC |
| Gate-Drain Charge | Qgd | VDS=50V,ID=3A, VGS=10V | -- | 1.1 | -- | nC |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=50V,ID=3A, VGS=10V,RGEN=3Ω | -- | 12.6 | -- | nS |
| Turn-on Rise Time | tr | VDD=50V,ID=3A, VGS=10V,RGEN=3Ω | -- | 19 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=50V,ID=3A, VGS=10V,RGEN=3Ω | -- | 20 | -- | nS |
| Turn-off Fall Time | tf | VDD=50V,ID=3A, VGS=10V,RGEN=3Ω | -- | 27.8 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=5A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | -- | -- | 8 | A | |
2407301136_PJSEMI-PJMG10H08NTE_C36493741.pdf
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