High breakdown voltage transistor ROHM IMX8T108 in SMT6 package for in various electronic appliances

Key Attributes
Model Number: IMX8T108
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
140MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
50mA
Collector - Emitter Voltage VCEO:
120V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
IMX8T108
Package:
SOT-457
Product Description

IMX8 Transistors Rev.A

The IMX8 is a general-purpose transistor featuring dual 2SC3906K chips within an SMT package. It offers a high breakdown voltage and is suitable for use in ordinary electronic equipment such as audio visual equipment, office-automation equipment, communications devices, electrical appliances, and electronic toys.

Product Attributes

  • Brand: ROHM
  • Package: SMT6
  • Marking Code: X8
  • Basic Ordering Unit: 3000 pieces
  • Note: Not Recommended for New Designs

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 120 - - V IC=50A
Collector-emitter breakdown voltage BVCEO 120 - - V IC=1mA
Emitter-base breakdown voltage BVEBO 5 - - V IE=50A
Collector cutoff current ICBO - - 0.5 A VCB=100V
Emitter cutoff current IEBO - - 0.5 A VEB=4V
DC current transfer ratio hFE - - 820 - VCE=6V, IC=2mA
Collector-emitter saturation voltage VCE(sat) - - 0.5 V IC/IB=10mA/1mA
Transition frequency fT - 140 - MHz VCE=12V, IE= -2mA, f=100MHz

Absolute Maximum Ratings

Parameter Symbol Limits Unit Notes
Collector-base voltage VCBO 120 V
Collector-emitter voltage VCEO 120 V
Emitter-base voltage VEBO 5 V
Collector current IC 50 mA
Power dissipation Pc 300(TOTAL) mW * 200mW per element must not be exceeded.
Junction temperature Tj 150 C
Storage temperature Tstg -55 to +150 C

2202132000_ROHM-IMX8T108_C2840176.pdf

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