Load switching and power management device PJSEMI PJM07P30PA P Channel Enhancement Mode Power MOSFET
Key Attributes
Model Number:
PJM07P30PA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7A
RDS(on):
50mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
93.5pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
610pF@15V
Pd - Power Dissipation:
3W
Gate Charge(Qg):
51nC@10V
Mfr. Part #:
PJM07P30PA
Package:
SOP-8
Product Description
Product Overview
The PJM07P30PA is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for load switching, PWM applications, and power management. Key advantages include 100% Avalanche Tested, RoHS and Reach Compliance, and Halogen and Antimony Free construction. This device offers low on-resistance characteristics at various gate-source voltages.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 7 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 28 | A | ||
| Maximum Power Dissipation | PD | 3 | W | |||
| Single Pulse Avalanche Energy | EAS | Note2 | 20 | mJ | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Thermal Resistance,Junction-to-Ambient | RθJA | Note3 | 41.7 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250µA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | VDS=VGS,ID=-250µA,Note4 | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-7A,Note4 | -- | 22 | 28 | mΩ |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-4A,Note4 | -- | 35 | 50 | mΩ |
| Forward Transconductance | gFS | VDS=-5V,ID=-1A,Note4 | -- | 4.7 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | -- | 610 | -- | pF |
| Output Capacitance | Coss | VDS=-15V,VGS=0V,f=1MHz | -- | 116 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V,f=1MHz | -- | 93.5 | -- | pF |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 15.8 | -- | Ω |
| Total Gate Charge | Qg | VDS=-15V, ID=-8A, VGS=-10V | -- | 51 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-15V, ID=-8A, VGS=-10V | -- | 9.8 | -- | nC |
| Gate-Drain Charge | Qgd | VDS=-15V, ID=-8A, VGS=-10V | -- | 8.2 | -- | nC |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6Ω | -- | 13 | -- | nS |
| Turn-on Rise Time | tr | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6Ω | -- | 15 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6Ω | -- | 198 | -- | nS |
| Turn-off Fall Time | tf | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6Ω | -- | 98 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | VGS=0V,IS=-7A,Note4 | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | -- | -- | 7 | A | |
2409302136_PJSEMI-PJM07P30PA_C22438603.pdf
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