Silicon N Channel MOSFET PIELENST 2N7002 L Suitable for Load Switching and Small Signal Applications
Key Attributes
Model Number:
2N7002-L
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-50℃~+150℃
RDS(on):
3Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
50pF
Gate Charge(Qg):
3nC@4.5V
Mfr. Part #:
2N7002-L
Package:
SOT-23
Product Description
Product Overview
The 2N7002-L is a silicon N-Channel MOS type field-effect transistor designed for voltage-controlled small signal switching. It features a high-density cell design for low RDS(on), a rugged and reliable construction, and high saturation current capability. This ESD-protected device is suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: SZPIELENST.COM
- Material: Silicon N-Channel MOS Type
- Package: SOT23
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25 | 0.3 | A | ||
| TA=100 | 0.19 | |||||
| Drain Current-Pulsed | IDM | 0.8 | A | |||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -50 | To | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS=±10V,VDS=0V | ±500 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 1 | 2.5 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10 V, ID=0.3A | 2 | 3 | ||
| VGS= 5 V, ID=0.3A | 2.1 | 3.5 | ||||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHz | 21 | pF | ||
| Output Capacitance | Coss | VDS=25V,VGS=0V, f=1.0MHz | 11 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, f=1.0MHz | 4 | pF | ||
| Turn-on Delay Time | td(on) | VDD=30V,ID=0.2A, VGS=10V ,RG=10 | 10 | nS | ||
| Turn-on Rise Time | tr | VDD=30V,ID=0.2A, VGS=10V ,RG=10 | 50 | nS | ||
| Turn-Off Delay Time | td(off) | VDD=30V,ID=0.2A, VGS=10V ,RG=10 | 17 | nS | ||
| Turn-Off Fall Time | tf | VDD=30V,ID=0.2A, VGS=10V ,RG=10 | 10 | nS | ||
| Total Gate Charge | Qg | VDS=10V,ID=0.3A, VGS=4.5V | 1.7 | nC | ||
| Gate-Source Charge | Qgs | VDS=10V,ID=0.3A, VGS=4.5V | 0.8 | nC | ||
| Gate-Drain Charge | Qgd | VDS=10V,ID=0.3A, VGS=4.5V | 0.8 | nC | ||
| Source-Drain Diode Characteristics | ||||||
| Forward on Voltage | VSD | VGS=0V,IS=0.2A | 0.87 | 1.2 | V | |
2411211547_PIELENST-2N7002-L_C41376480.pdf
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