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quality Qspeed Family Power Integrations LQA40B150C 150 V 40 A Diode for High Reliability Applications factory
quality Qspeed Family Power Integrations LQA40B150C 150 V 40 A Diode for High Reliability Applications factory

Qspeed Family Power Integrations LQA40B150C 150 V 40 A Diode for High Reliability Applications

Key Attributes
Model Number: LQA40B150C
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
350A
Reverse Leakage Current (Ir):
500uA
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
150V
Voltage - Forward(Vf@If):
1.2V@20A
Current - Rectified:
20A
Mfr. Part #:
LQA40B150C
Package:
TO-263AB
Product Description

Qspeed Family 150 V, 40 A Common-Cathode Diode

The LQA40T150C and LQA40B150C are 150 V, 40 A common-cathode diodes from the Qspeed family, offering the lowest QRR of any 150 V Silicon diode. Their advanced recovery characteristics enhance efficiency, reduce EMI, and eliminate the need for snubbers. These diodes are suitable for AC/DC and DC/DC output rectification, output and freewheeling applications, motor drive circuits, and DC-AC inverters.

Product Attributes

  • Brand: Qspeed
  • Certifications: RoHS Compliant, Halogen free per IEC 61249-2-21
  • Material: Lead-free plating and Green mold compound
  • Origin: www.power.com

Technical Specifications

ModelIF(AVG) per diodeVRRMQRR (Typ at 125 C)IRRM (Typ at 125 C)Softness tb/ta (Typ at 125 C)Package
LQA40T150C20 A150 V33.6 nC1.86 A0.57TO-220AB
LQA40B150C20 A150 V33.6 nC1.86 A0.57TO-263AB
SymbolParameterConditionsRatingUnits
VRRMPeak repetitive reverse voltageTJ = 25 C150V
IF(AVG)Average forward currentPer Diode, TJ = 150 C, TC = 116 C20A
IF(AVG)Average forward currentPer Device, TJ = 150 C, TC = 116 C40A
IFSMNon-repetitive peak surge currentPer Diode, 60 Hz, cycle170A
IFSMNon-repetitive peak surge currentPer Diode, cycle of t = 28 s Sinusoid, TC = 25 C350A
TJOperating junction temperature range55 to 150C
TSTGStorage temperature55 to 150C
PDPower dissipationTC = 25 C65.8W
SymbolResistance from:ConditionsRatingUnits
RJAJunction to ambientTO-220AB (only)62C/W
RJCJunction to casePer Diode1.9C/W
RJCJunction to casePer Device1.0C/W
SymbolParameterConditionsMinTypMaxUnits
IRReverse current per diodeVR = 150 V, TJ = 25 C--500A
IRReverse current per diodeVR = 150 V, TJ = 125 C-0.44-mA
VFForward voltage per diodeIF = 20 A, TJ = 25 C-1.01.2V
VFForward voltage per diodeIF = 20 A, TJ = 150 C-0.875-V
CJJunction capacitance per diodeVR = 10 V, 1 MHz-74-pF
tRRReverse recovery time, per diodedIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 25 C-16.9-ns
tRRReverse recovery time, per diodedIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 125 C-30.1-ns
QRRReverse recovery charge, per diodedIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 25 C-10.425.7nC
QRRReverse recovery charge, per diodedIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 125 C-33.6-nC
IRRMMaximum reverse recovery current, per diodedIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 25 C-1.032.35A
IRRMMaximum reverse recovery current, per diodedIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 125 C-1.86-A
SSoftness per diodedIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 25 C-0.6-
SSoftness per diodedIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 125 C-0.57-

2401261243_POWER-INTEGRATIONS-LQA40B150C_C568313.pdf

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