Power Integrations LQA30B150C 150 Volt 30 Amp Diode Offering Low IRRM and Fast Switching Performance
Key Attributes
Model Number:
LQA30B150C
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
350A
Reverse Leakage Current (Ir):
500uA
Diode Configuration:
1 Pair Common Cathode
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
150V
Voltage - Forward(Vf@If):
1.2V@15A
Current - Rectified:
15A
Mfr. Part #:
LQA30B150C
Package:
TO-263AB
Product Description
Qspeed Family 150 V, 30 A Common-Cathode Diode
This device offers the lowest QRR of any 150 V Silicon diode, leading to increased efficiency, reduced EMI, and elimination of snubbers. It is suitable for AC/DC and DC/DC output rectification, output and freewheeling diodes, motor drive circuits, and DC-AC inverters. Key features include low QRR, low IRRM, low tRR, high dIF/dt capability, and soft recovery, which collectively enhance efficiency, reduce the need for snubber circuits, minimize EMI filter component size and count, and enable extremely fast switching.
Product Attributes
- Brand: Qspeed
- Certifications: RoHS Compliant, Halogen free per IEC 61249-2-21
- Material: Lead-free plating and Green mold compound
Technical Specifications
| Part Number | IF(AVG) per diode | VRRM | QRR (Typ at 125 C) | IRRM (Typ at 125 C) | tb/ta (Typ at 125 C) | Package |
| LQA30T150C | 15 A | 150 V | 31.5 nC | 1.82 A | 0.55 | TO-220AB |
| LQA30B150C | 15 A | 150 V | 31.5 nC | 1.82 A | 0.55 | TO-263AB |
| Symbol | Parameter | Conditions | Rating | Units |
| Absolute Maximum Ratings | ||||
| VRRM | Peak repetitive reverse voltage | TJ = 25 C | 150 | V |
| IF(AVG) | Average forward current (Per Diode) | TJ = 150 C, TC = 120 C | 15 | A |
| IF(AVG) | Average forward current (Per Device) | TJ = 150 C, TC = 120 C | 30 | A |
| IFSM | Non-repetitive peak surge current (Per Diode) | 60 Hz, cycle | 130 | A |
| IFSM | Non-repetitive peak surge current (Per Diode) | cycle of t = 28 s Sinusoid, TC = 25 C | 350 | A |
| TJ | Operating junction temperature range | 55 to 150 | C | |
| TSTG | Storage temperature | 55 to 150 | C | |
| Lead soldering temperature | Leads at 1.6 mm from case, 10 sec | 300 | C | |
| PD | Power dissipation | TC = 25 C | 56.8 | W |
| Thermal Resistance | ||||
| RJA | Junction to ambient | TO-220AB (only) | 62 | C/W |
| RJC | Junction to case (Per Diode) | 2.2 | C/W | |
| RJC | Junction to case (Per Device) | 1.1 | C/W | |
| DC Characteristics per diode (at TJ = 25 C unless otherwise specified) | ||||
| IR | Reverse current per diode | VR = 150 V, TJ = 25 C | 500 | A |
| IR | Reverse current per diode | VR = 150 V, TJ = 125 C | 0.27 | mA |
| VF | Forward voltage per diode | IF = 15 A, TJ = 25 C | 1.2 | V |
| VF | Forward voltage per diode | IF = 15 A, TJ = 150 C | 0.86 | V |
| CJ | Junction capacitance per diode | VR = 10 V, 1 MHz | 54 | pF |
| Dynamic Characteristics per diode (at TJ = 25 C unless otherwise specified) | ||||
| tRR | Reverse recovery time | dIF/dt = 100 A/s, VR = 100 V, IF = 15 A, TJ = 25 C | 16.3 | ns |
| tRR | Reverse recovery time | dIF/dt = 100 A/s, VR = 100 V, IF = 15 A, TJ = 125 C | 28.7 | ns |
| QRR | Reverse recovery charge | dIF/dt = 100 A/s, VR = 100 V, IF = 15 A, TJ = 25 C | 25.0 | nC |
| QRR | Reverse recovery charge | dIF/dt = 100 A/s, VR = 100 V, IF = 15 A, TJ = 125 C | 31.5 | nC |
| IRRM | Maximum reverse recovery current | dIF/dt = 100 A/s, VR = 100 V, IF = 15 A, TJ = 25 C | 2.32 | A |
| IRRM | Maximum reverse recovery current | dIF/dt = 100 A/s, VR = 100 V, IF = 15 A, TJ = 125 C | 1.82 | A |
| S | Softness | dIF/dt = 100 A/s, VR = 100 V, IF = 15 A, TJ = 25 C | 0.63 | |
| S | Softness | dIF/dt = 100 A/s, VR = 100 V, IF = 15 A, TJ = 125 C | 0.55 | |
2401261243_POWER-INTEGRATIONS-LQA30B150C_C568311.pdf
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