Electronic switching diode PJSEMI MMBP187SE silicon epitaxial planar with fast switching features
Key Attributes
Model Number:
MMBP187SE
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@80V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Diode Configuration:
2 Pair Common Anode
Voltage - DC Reverse (Vr) (Max):
80V
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
850mV@5mA
Current - Rectified:
100mA
Mfr. Part #:
MMBP187SE
Package:
SOT-23-5
Product Description
Product Overview
The MMBP187SE is a high-speed switching silicon epitaxial planar switching diode designed for efficient performance. It offers fast switching capabilities, making it suitable for various electronic applications.
Product Attributes
- Brand: Pingjingsemi
- Model: MMBP187SE
- Marking Code: P187
- Package: SOT-23-5
- Origin: Not specified
- Material: Silicon Epitaxial Planar
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Maximum Repetitive Reverse Voltage | VRRM | 80 | V | |
| Reverse Voltage | VR | 80 | V | |
| Average Rectified Forward Current | IF(AV) | 100 | mA | |
| Non-Repetitive Peak Forward Surge Current (t=1s) | IFSM | 1 | A | |
| Non-Repetitive Peak Forward Surge Current (t=1s) | IFSM | 4 | A | |
| Maximum Power Dissipation | PD | 350 | mW | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature Range | TSTG | -55 to +150 | C | |
| Forward Voltage | VF | 0.7 | V | IF = 5 mA |
| Forward Voltage | VF | 0.85 | V | IF = 10 mA |
| Reverse Breakdown Voltage | V(BR)R | 80 | V | IR = 100 A |
| Reverse Current | IR | 1 | A | VR = 80 V |
| Typical Junction Capacitance | Cj | 3 | pF | VR = 0 V, f = 1 MHz |
| Maximum Reverse Recovery Time | Trr | 4 | nS | IF = IR =10mA, Irr = 0.1IR |
2411121111_PJSEMI-MMBP187SE_C41413559.pdf
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