Power MOSFET PJSEMI PJM90H09NTF N Channel Enhancement Mode with TO 220F Package and High Voltage Capability
Key Attributes
Model Number:
PJM90H09NTF
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.4Ω@10V,4.5A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
146pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.593nF
Pd - Power Dissipation:
67W
Gate Charge(Qg):
49nC@10V
Mfr. Part #:
PJM90H09NTF
Package:
TO-220F
Product Description
PJM90H09NTF N-Channel Enhancement Mode Power MOSFET
The PJM90H09NTF is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers. It features fast switching, low reverse transfer capacitances, and high voltage capability (VDS=900V) with a continuous drain current of 9A. Its low on-resistance (RDS(on)<1.4 @VGS=10V) makes it suitable for efficient power applications.
Product Attributes
- Brand: PingJingSemi
- Model: PJM90H09NTF
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Package: TO-220F
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 900 | V | |||
| Gate-Source Voltage | VGS | ±30 | V | |||
| Drain Current-Continuous | ID | 9 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 36 | A | ||
| Single pulse avalanche energy | EAS | Note3 | 580 | mJ | ||
| Maximum Power Dissipation | PD | 67 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | 100 | °C/W | |||
| Maximum Junction-to-Case | RθJC | 1.86 | °C/W | |||
| Electrical Characteristics (TC=25°C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 900 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=900V,VGS=0V | -- | -- | 25 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±30V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note2,VDS=VGS,ID=250μA | 2.0 | -- | 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | Note2,VGS=10V,ID=4.5A | -- | 1.1 | 1.4 | Ω |
| Forward Transconductance | gFS | Note2,VDS=30V,ID=4.5A | -- | 9.2 | -- | S |
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 2593 | -- | pF |
| Output Capacitance | Coss | -- | 12 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 146 | -- | pF | |
| Turn-on Delay Time | td(on) | VDD=450V, ID=9A,VGS=10V,RG=12Ω | -- | 35 | -- | nS |
| Turn-on Rise Time | tr | -- | 41 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 134 | -- | nS | |
| Turn-off Fall Time | tf | -- | 45 | -- | nS | |
| Total Gate Charge | Qg | VDD=400V, ID=9A,VGS=10V | -- | 49 | -- | nC |
| Gate-Source Charge | Qgs | -- | 13 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 17 | -- | nC | |
| Diode Forward Voltage | VSD | Note2,VGS=0V,IS=9A | -- | -- | 1.5 | V |
| Diode Forward Current | IS | -- | -- | 9 | A | |
2410121955_PJSEMI-PJM90H09NTF_C510724.pdf
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