Energy P channel enhancement mode power mosfet PJSEMI PJM84PSA with miniature surface mount sot 23 package
Key Attributes
Model Number:
PJM84PSA
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
10Ω@5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.8pF
Number:
1 P-Channel
Input Capacitance(Ciss):
43pF
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
1.77nC
Mfr. Part #:
PJM84PSA
Package:
SOT-23
Product Description
Product Overview
The PJM84PSA is a P-Channel Enhancement Mode Power MOSFET designed for energy-efficient applications. It features low threshold voltage, high-speed switching, and ESD protection up to 2KV. Its miniature surface mount package saves board space, making it suitable for PWM applications, load switches, and power management.
Product Attributes
- Brand: PingJingSemi
- Package: SOT-23
- ESD Protected (HBM) up to 2KV
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 50 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-50V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 10 | A |
| Gate Threshold Voltage | -VGS(th) | VDS=VGS,ID=-250A | 0.9 | 1.6 | 2 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V,ID=-0.1A | -- | 2.5 | 8 | |
| Drain-Source On-Resistance | RDS(on) | VGS=-5V,ID=-0.1A | -- | 3 | 10 | |
| Forward Transconductance | gFS | VDS=-25V,ID=-0.1A | 0.05 | -- | -- | S |
| Input Capacitance | Ciss | VDS=-30V,VGS=0V,f=1MHz | -- | 43 | -- | pF |
| Output Capacitance | Coss | -- | 2.9 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 1.8 | -- | pF | |
| Turn-on Delay Time | td(on) | VDD=-30V, VGS=-4.5V ID=-0.15A ,RGEN=2.5 | -- | 8.6 | -- | nS |
| Turn-on Rise Time | tr | -- | 20 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 15 | -- | nS | |
| Turn-off Fall Time | tf | -- | 77 | -- | nS | |
| Total Gate Charge | Qg | VDS=-30V,ID=0.15A VGS=-10V | -- | 1.77 | -- | nC |
| Gate-Source Charge | Qgs | -- | 0.57 | -- | nC | |
| Gate-Drain Charge | Qg d | -- | 0.18 | -- | nC | |
| Diode Forward Voltage | -VSD | VGS=0V,IS=-0.13A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | -- | -- | 0.13 | A | |
| Drain-Source Voltage | -VDS | -- | -- | 50 | V | |
| Gate-Source Voltage | VGS | -- | -- | 20 | V | |
| Drain Current-Continuous | -ID | -- | -- | 0.13 | A | |
| Drain Current-Pulsed | -IDM | at tp10s | -- | -- | 0.52 | A |
| Maximum Power Dissipation | PD | -- | -- | 225 | mW | |
| Junction Temperature | TJ | -- | -- | 150 | C | |
| Storage Temperature Range | TSTG | -55 | -- | +150 | C | |
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | -- | 556 | -- | C/W |
2410122006_PJSEMI-PJM84PSA_C411722.pdf
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