PJSEMI PJM03N60SQ N Channel Enhancement Mode Power MOSFET suitable for industrial power control
Key Attributes
Model Number:
PJM03N60SQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
110mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
350pF@25V
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
PJM03N60SQ
Package:
SOT-89
Product Description
Product Overview
The PJM03N60SQ is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features advanced trench technology, offering low on-resistance and high performance for various applications. This RoHS and Reach compliant component is halogen and antimony free, suitable for DC/DC converters and battery switch applications.
Product Attributes
- Brand: PJM (implied by product code)
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 3 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 18 | A | ||
| Maximum Power Dissipation | PD | 1.5 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 83 | °C/W | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3 VDS=VGS,ID=250μA | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3 VGS=10V,ID=3A | -- | 68 | 95 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3 VGS=4.5V,ID=3A | -- | 80 | 110 | mΩ |
| Forward Transconductance | gFS | Note3 VDS=5V,ID=1A | -- | 3 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 350 | -- | pF |
| Output Capacitance | Coss | -- | 29 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 23 | -- | pF | |
| Total Gate Charge | Qg | VDD=30V, ID=3A, VGS=0~10V | -- | 9 | -- | nC |
| Gate-Source Charge | Qgs | -- | 1.5 | -- | nC | |
| Gate-Drain Charge | Qg d | -- | 2 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=2A VGS=10V,RGEN=3Ω | -- | 5 | -- | nS |
| Turn-on Rise Time | tr | -- | 7 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 37 | -- | nS | |
| Turn-off Fall Time | tf | -- | 22 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3 VGS=0V,IS=3A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 3 | A |
2411191726_PJSEMI-PJM03N60SQ_C42388597.pdf
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