High Current Capacity MOSFET PJSEMI PJMG10H45NTE Designed for Power Switching and Frequency Circuits
Key Attributes
Model Number:
PJMG10H45NTE
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
22mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
1 N-channel
Pd - Power Dissipation:
72W
Input Capacitance(Ciss):
1.187nF
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
PJMG10H45NTE
Package:
TO-252
Product Description
Product Overview
The PJMG10H45NTE is an N-Channel Enhancement Mode Power MOSFET featuring advanced Split Gate Trench Technology. It is designed for power switching applications, including hard switched and high frequency circuits, as well as uninterruptible power supplies. This MOSFET is 100% avalanche tested and RoHS compliant, offering reliable performance with low on-resistance characteristics.
Product Attributes
- Brand: Pingjing Semiconductor
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 45 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 180 | A | ||
| Maximum Power Dissipation | PD | 72 | W | |||
| Single Pulse Avalanche Energy | EAS | Note2 | 76.5 | mJ | ||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250A | 1.0 | 1.8 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=20A | -- | 14 | 17 | m |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=10A | -- | 18 | 22 | m |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=3A | -- | 11 | -- | S |
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHz | -- | 1187 | -- | pF |
| Output Capacitance | Coss | VDS=30V,VGS=0V,f=1MHz | -- | 579 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V,f=1MHz | -- | 13 | -- | pF |
| Gate Resistance | RG | VDS=0V,VGS=0V,f=1MHz | -- | 1.7 | -- | |
| Total Gate Charge | Qg | VDS=50V, ID=25A, VGS=10V | -- | 16 | -- | nC |
| Gate-Source Charge | Qgs | VDS=50V, ID=25A, VGS=10V | -- | 5.6 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=50V, ID=25A, VGS=10V | -- | 2.4 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=50V, ID=25A, VGS=10V, RGEN=2.2 | -- | 39.2 | -- | nS |
| Turn-on Rise Time | tr | VDD=50V, ID=25A, VGS=10V, RGEN=2.2 | -- | 11 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=50V, ID=25A, VGS=10V, RGEN=2.2 | -- | 53.2 | -- | nS |
| Turn-off Fall Time | tf | VDD=50V, ID=25A, VGS=10V, RGEN=2.2 | -- | 15.8 | -- | nS |
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=20A | -- | -- | 1.3 | V |
| Diode Forward Current | IS | -- | -- | 45 | A | |
| Thermal Characteristics | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 1.74 | C/W | |||
2407301136_PJSEMI-PJMG10H45NTE_C36493750.pdf
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