Load Switching Power MOSFET PJSEMI PJM3400NSQ with Low Gate Charge and High Forward Transconductance
Key Attributes
Model Number:
PJM3400NSQ
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
9A
RDS(on):
28mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
52pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
702pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
9.5nC@10V
Mfr. Part #:
PJM3400NSQ
Package:
SOT-89
Product Description
Product Overview
The PJM3400NSQ is an N-Channel Enhancement Mode Power MOSFET designed for load switching and PWM applications. It offers high power and current handling capability with low gate charge and RDS(on). This MOSFET is ideal for power management solutions.
Product Attributes
- Brand: PingJingSemi
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | -- | -- | V |
| VDS=30V,VGS=0V | -- | -- | 1 | A | ||
| VGS=12V,VDS=0V | -- | -- | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.7 | 0.9 | 1.4 | V |
| VGS=10V, ID=5.8A | -- | 20 | 28 | m | ||
| Drain-source on-resistance | RDS(on) | VGS=4.5V, ID=5A | -- | 22 | 35 | m |
| Forward Transconductance | gFS | VDS=5V,ID=5A | -- | 5.5 | -- | S |
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | -- | -- | pF |
| Output Capacitance | Coss | -- | -- | -- | -- | pF |
| Reverse Transfer Capacitance | Crss | -- | -- | -- | -- | pF |
| Turn-on Delay Time | td(on) | VDD=15V,RL=2.7,VGS=10V,RGEN=3 | -- | 3.3 | -- | nS |
| Turn-on Rise Time | tr | -- | -- | 4.8 | -- | nS |
| Turn-off Delay Time | td(off) | -- | -- | 26 | -- | nS |
| Turn-off Fall Time | tf | -- | -- | 4 | -- | nS |
| Total Gate Charge | Qg | VDS=15V,ID=5.8A, VGS=4.5V | -- | 9.5 | -- | nC |
| Gate-Source Charge | Qgs | -- | -- | 1.5 | -- | nC |
| Gate-Drain Charge | Qg | -- | -- | 3 | -- | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=6A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | -- | -- | -- | 6 | A |
| Drain-Source Voltage | VDS | -- | -- | -- | 30 | V |
| Gate-Source Voltage | VGS | -- | -- | -- | 12 | V |
| Drain Current-Continuous | ID | -- | -- | -- | 6 | A |
| Drain Current-Pulsed | IDM | Note1 | -- | -- | 30 | A |
| Maximum Power Dissipation | PD | -- | -- | -- | 1.4 | W |
| Junction Temperature | TJ | -- | -- | -- | 150 | |
| Storage Temperature Range | TSTG | -- | -55 | -- | +150 | |
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | -- | 89 | -- | C/W |
2411191726_PJSEMI-PJM3400NSQ_C42388596.pdf
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