Power MOSFET PJSEMI PJM09N40PA N Channel type with RoHS Reach compliance and avalanche energy support
Key Attributes
Model Number:
PJM09N40PA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
9A
RDS(on):
25mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
50pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
708pF@20V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
PJM09N40PA
Package:
SOP-8
Product Description
Product Overview
The PJM09N40PA is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management applications. Featuring advanced trench technology, it offers low on-resistance and robust performance with 100% avalanche testing. This RoHS and Reach compliant component is suitable for load switching and PWM applications.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Material: N-Channel Enhancement Mode Power MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 9 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 32 | A | ||
| Single Pulsed Avalanche Energy | EAS | Note4 | 12.9 | mJ | ||
| Maximum Power Dissipation | PD | 2.5 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 50.0 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 40 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=40V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250μA | 1.0 | 1.65 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=10V,ID=8A | -- | 18 | 25 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=4.5V,ID=5A | -- | 25 | 35 | mΩ |
| Forward Transconductance | gFS | Note3, VDS=5V,ID=2A | -- | 6.6 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V,VGS=0V,f=1MHz | -- | 708 | -- | pF |
| Output Capacitance | Coss | VDS=20V,VGS=0V,f=1MHz | -- | 61 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=20V,VGS=0V,f=1MHz | -- | 50 | -- | pF |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 2 | -- | Ω |
| Total Gate Charge | Qg | VDS=20V,ID=8A, VGS=10V | -- | 12 | -- | nC |
| Gate-Source Charge | Qgs | VDS=20V,ID=8A, VGS=10V | -- | 3.2 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=20V,ID=8A, VGS=10V | -- | 3.1 | -- | nC |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=20V, RL=2.5Ω, VGS=10V,RGEN=3Ω | -- | 4 | -- | nS |
| Turn-on Rise Time | tr | VDD=20V, RL=2.5Ω, VGS=10V,RGEN=3Ω | -- | 3 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=20V, RL=2.5Ω, VGS=10V,RGEN=3Ω | -- | 15 | -- | nS |
| Turn-off Fall Time | tf | VDD=20V, RL=2.5Ω, VGS=10V,RGEN=3Ω | -- | 2 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=9A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 9 | A |
2405221106_PJSEMI-PJM09N40PA_C22438606.pdf
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