P Channel Enhancement Mode MOSFET PJSEMI PJMG10H13PSQ for power switching and UPS device integration
Key Attributes
Model Number:
PJMG10H13PSQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
165mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
15.5pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
725pF@25V
Pd - Power Dissipation:
1.35W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
PJMG10H13PSQ
Package:
SOT-89
Product Description
PJMG10H13PSQ P-Channel Enhancement Mode Power MOSFET
The PJMG10H13PSQ is a P-Channel Enhancement Mode Power MOSFET designed for power switching applications. It features advanced Split Gate Trench Technology, offering advantages such as RoHS and Reach compliance, and being Halogen and Antimony Free. This MOSFET is suitable for use in Uninterruptible Power Supply systems.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS, Reach Compliant
- Material: Halogen and Antimony Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 13 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 30 | A | ||
| Maximum Power Dissipation | PD | 1.35 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Maximum Junction-to-Ambient | RθJA | Note2 | 93 | °C/W | ||
| Electrical Characteristics (Ta=25°C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-100V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±10 | μA |
| Gate Threshold Voltage | -VGS(th) | Note3, VDS=VGS,ID=-250μA | 1 | 1.7 | 3 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-10V,ID=-7A | -- | 125 | 150 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-4.5V,ID=-4A | -- | 140 | 165 | mΩ |
| Forward Transconductance | gFS | Note3, VDS=-5V,ID=-2A | -- | 7 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-25V,VGS=0V,f=1MHz | -- | 725 | -- | pF |
| Output Capacitance | Coss | VDS=-25V,VGS=0V,f=1MHz | -- | 79 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-25V,VGS=0V,f=1MHz | -- | 15.5 | -- | pF |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 19 | -- | Ω |
| Total Gate Charge | Qg | VDS=-50V,ID=-10A, VGS=-10V | -- | 25 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-50V,ID=-10A, VGS=-10V | -- | 5 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=-50V,ID=-10A, VGS=-10V | -- | 7 | -- | nC |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-50V, ID=-10A VGS=-10V,RGEN=9.1Ω | -- | 14 | -- | nS |
| Turn-on Rise Time | tr | VDD=-50V, ID=-10A VGS=-10V,RGEN=9.1Ω | -- | 18 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-50V, ID=-10A VGS=-10V,RGEN=9.1Ω | -- | 50 | -- | nS |
| Turn-off Fall Time | tf | VDD=-50V, ID=-10A VGS=-10V,RGEN=9.1Ω | -- | 18 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3, VGS=0V,IS=-10A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 13 | A |
2411191726_PJSEMI-PJMG10H13PSQ_C42388542.pdf
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