NPN Digital Transistor ROHM DTC014EEBTL Featuring Built in Bias Resistors for Circuit Simplification
Product Overview
The ROHM DTC014E series is a line of NPN digital transistors featuring built-in bias resistors (R1 = R2 = 10k). This integration simplifies circuit design by eliminating the need for external input resistors, enabling the configuration of inverter circuits with ease. Designed for straightforward operation, users only need to set the on/off conditions. These transistors are suitable for applications such as inverters, interfaces, and drivers.
Product Attributes
- Brand: ROHM
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| DTC014EM | SOT-723 (VMT3) | 1212 | T2L | 180 | 8 | 8000 | 40 |
| DTC014EEB | SOT-416FL (EMT3F) | 1616 | TL | 180 | 8 | 3000 | 40 |
| DTC014EUB | SOT-323FL (UMT3F) | 2021 | TL | 180 | 8 | 3000 | 40 |
Absolute Maximum Ratings (Ta = 25C)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Supply voltage | VCC | 50 | V |
| Input voltage | VIN | 40 to -10 | V |
| Output current | IO | 50 | mA |
| Collector current (MAX) | IC(MAX)*1 | 100 | mA |
| Power dissipation (DTC014EM) | PD*2 | 150 | mW |
| Power dissipation (DTC014EEB) | PD*2 | 150 | mW |
| Power dissipation (DTC014EUB) | PD*2 | 200 | mW |
| Junction temperature | Tj | 150 | |
| Range of storage temperature | Tstg | -55 to +150 |
Electrical Characteristics (Ta = 25C)
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Input voltage (OFF) | VCC = 5V, IO = 100A | - | - | 0.8 | V |
| Input voltage (ON) | VO = 0.3V, IO = 5mA | 2.6 | - | - | V |
| Output voltage (ON) | IO = 5mA, II = 0.5mA | - | 50 | 150 | mV |
| Input current | VI = 5V | - | - | 880 | A |
| Output current (OFF) | VCC = 50V, VI = 0V | - | - | 500 | nA |
| DC current gain | VO = 10V, IO = 5mA | 35 | - | - | - |
| Input resistance R1 | 7 | 10 | 13 | k | |
| Resistance ratio R2/R1 | 0.8 | 1.0 | 1.2 | - | |
| Transition frequency fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
2410231749_ROHM-DTC014EEBTL_C509871.pdf
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