Surface mount Schottky diode R O RB520S 30 with high current capability and halogen free construction
Key Attributes
Model Number:
RB520S-30
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Leakage Current (Ir):
1uA
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
600mV@200mA
Current - Rectified:
200mA
Mfr. Part #:
RB520S-30
Package:
SOD-523
Product Description
Product Overview
The RB520S-30 is a surface mount Schottky barrier rectifier designed for low voltage, high frequency circuit signals. It features high current capability and a low forward voltage drop, meeting MSL level 1 standards. The device is housed in a SOD-523 package and is RoHS-compliant and halogen-free.
Product Attributes
- Brand: Zhuhai Hongjiacheng Technology co., Ltd
- Origin: Zhuhai
- Case: SOD-523
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Cathode line denotes the cathode end
- Molding compound: Meets UL 94V-0 flammability rating
- Compliance: RoHS-compliant, halogen-free
Technical Specifications
| Parameter | Symbol | Unit | Value | Test Conditions |
| Reverse Voltage | VR | V | 30 | |
| Average Forward Current | IF(AV) | A | 0.2 | |
| Power Dissipation | PD | mW | 150 | (Ta=25 Unless otherwise specified) |
| Maximum Repetitive Peak Reverse Voltage | VRRM | V | 30 | |
| Maximum RMS Voltage | VRMS | V | 21 | |
| Maximum DC Blocking Voltage | VDC | V | 30 | |
| Non-repetitive Peak Forward Surge Current | IFSM | A | 1.0 | @ t=8.3ms Half-sine wave |
| Junction Temperature | Tj | 125 | ||
| Storage Temperature Range | TSTG | -55 ~+150 | ||
| Typical Thermal Resistance | RJA | /W | 667 | |
| Maximum Forward Voltage | VF | V | 0.6 | IF=200mA (Max) |
| Maximum Reverse Current | IR | A | 1.0 | VR=10V (Max) |
2507101510_R-O-RB520S-30_C7502701.pdf
Related Products
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
