NPN Digital Transistor ROHM DTC143EMT2L Featuring Built in Bias Resistors for Simplified Circuit Setup
Key Attributes
Model Number:
DTC143EMT2L
Product Custom Attributes
Output Voltage(VO(on)):
300mV@10mA,0.5mA
Input Resistor:
4.7kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC143EMT2L
Package:
SOT-723
Product Description
Product Overview
The ROHM DTC143E series are NPN digital transistors featuring built-in bias resistors (R1 = R2 = 4.7k). This integrated design simplifies circuit configuration, particularly for inverter circuits, by eliminating the need for external input resistors. Designed for easy operation by simply setting on/off conditions, these transistors are suitable for inverter, interface, and driver applications. Complementary PNP types are available in the DTA143E series.Product Attributes
- Brand: ROHM
- Type: NPN Digital Transistor (Bias Resistor Built-in)
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Quantity (pcs) | Marking | VCC (MAX.) | IC (MAX.) | R1 | R2 |
|---|---|---|---|---|---|---|---|---|---|---|---|
| DTC143EM | SOT-723 | 1212 | T2L | 180 | 8 | 8000 | 23 | 50V | 100mA | 4.7k | 4.7k |
| DTC143EEB | SOT-416FL | 1616 | TL | 180 | 8 | 3000 | 23 | 50V | 100mA | 4.7k | 4.7k |
| DTC143EE3 | SOT-416 | 1616 | TL | 180 | 8 | 3000 | 23 | 50V | 100mA | 4.7k | 4.7k |
| DTC143EUB | SOT-323FL | 2021 | TL | 180 | 8 | 3000 | 23 | 50V | 100mA | 4.7k | 4.7k |
| DTC143EU3 | SOT-323 | 2021 | T106 | 180 | 8 | 3000 | 23 | 50V | 100mA | 4.7k | 4.7k |
| DTC143EKA | SOT-346 | 2928 | T146 | 180 | 8 | 3000 | 23 | 50V | 100mA | 4.7k | 4.7k |
| Parameter | Symbol | Conditions | Values (Min.) | Values (Typ.) | Values (Max.) | Unit |
|---|---|---|---|---|---|---|
| Supply voltage | VCC | 50 | V | |||
| Input voltage | VIN | -10 | 30 | V | ||
| Output current | IO | 100 | mA | |||
| Collector current | IC(MAX)*1 | 100 | mA | |||
| Power dissipation | PD*2 | DTC143EM | 150 | mW | ||
| Power dissipation | PD*2 | DTC143EEB | 150 | mW | ||
| Power dissipation | PD*2 | DTC143EE3 | 150 | mW | ||
| Power dissipation | PD*2 | DTC143EUB | 200 | mW | ||
| Power dissipation | PD*2 | DTC143EU3 | 200 | mW | ||
| Power dissipation | PD*2 | DTC143EKA | 200 | mW | ||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Input voltage (OFF) | VI(off) | VCC = 5V, IO = 100A | - | - | 0.5 | V |
| Input voltage (ON) | VI(on) | VO = 0.3V, IO = 20mA | 3.0 | - | - | V |
| Output voltage (ON) | VO(on) | IO = 10mA, II = 0.5mA | - | 100 | 300 | mV |
| Input current | II | VI = 5V | - | - | 1.8 | mA |
| Output current (OFF) | IO(off) | VCC = 50V, VI = 0V | - | - | 500 | nA |
| DC current gain | GI | VO = 5V, IO = 10mA | 30 | - | - | - |
| Input resistance | R1 | - | 3.29 | 6.11 | k | |
| Resistance ratio | R2/R1 | - | 0.8 | 1.2 | - | |
| Transition frequency | fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
2406121055_ROHM-DTC143EMT2L_C2984994.pdf
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