Small signal fast switching diode R O BAS316 with 250 milliwatt power dissipation and high stability
Key Attributes
Model Number:
BAS316
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
100V
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
BAS316
Package:
SOD-323
Product Description
Product Overview
The BAS316 is a fast-switching diode designed for high-reliability applications. It features a fast switching speed with a TrR less than 4nS, a power dissipation of 250mW, and high stability. This diode is suitable for small signal switching and ultra-high-speed switching applications.
Product Attributes
- Brand: (Hongjiacheng)
- Origin: Zhuhai Hongjiacheng Technology co., Ltd
- Case: SOD-323
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Molding compound meets UL 94V-0 flammability rating, RoHS-compliant, halogen-free
Technical Specifications
| Parameter | Symbol | Unit | Value | Test Conditions |
|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | V | 100 | |
| Maximum RMS Voltage | VRMS | V | 75 | |
| Reverse Breakdown voltage @IR=100A | V(BR)R | V | 100 | |
| Maximum Average Forward Rectified Current | IF(AV) | mA | 250 | |
| Repetitive peak forward current | IFRM | mA | 500 | |
| Non-Repetitive Peak forward surge current @tp=1.0ms | IFSM | A | 2.0 | |
| Power Dissipation | Pd | mW | 250 | (Ta=25) |
| Storage temperature | Tstg | -55 ~+150 | ||
| Junction temperature | Tj | 150 | ||
| Typical thermal resistance | RJ-A | /W | 500 | |
| Maximum instantaneous forward voltage | VF | V | 0.715 | IF=1.0mA |
| Maximum instantaneous forward voltage | VF | V | 0.855 | IF=10mA |
| Maximum instantaneous forward voltage | VF | V | 1.0 | IF=50mA |
| Maximum instantaneous forward voltage | VF | V | 1.25 | IF=150mA |
| Reverse Leakage Current | IR1 | nA | 30 | VR=25V |
| Reverse Leakage Current | IR2 | A | 1.0 | VR=75V |
| Total capacitance | CT | pF | 1.5 | VR=0V,f=1MHz |
| Maxinum reverse recovery time | Trr | ns | 4.0 | IF=IR=10mA,Irr=0.1IR, RL=100 |
Package Outline Dimensions (SOD-323)
| Symbol | Dimensions (mm) | Dimensions (Inches) | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 1.60 | 1.80 | 0.063 | 0.071 |
| B | 0.25 | 0.40 | 0.010 | 0.016 |
| C | 2.30 | 2.80 | 0.091 | 0.110 |
| D | 0.80 | 1.10 | 0.031 | 0.043 |
| D1 | 0.80 | 0.90 | 0.031 | 0.035 |
| E | 1.20 | 1.40 | 0.047 | 0.055 |
| F | 0.08 | 0.18 | 0.003 | 0.007 |
| L | 0.475REF | 0.475REF | 0.019REF | 0.019REF |
| L1 | 0.25 | 0.40 | 0.010 | 0.016 |
| H | - | 0.14 | - | 0.006 |
Suggested Pad Layout
| Symbol | Dimensions (mm) | Dimensions (Inches) | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| X | 0.65 | 0.75 | 0.026 | 0.030 |
| Y | 0.65 | 0.75 | 0.026 | 0.030 |
| Z | 2.10 | 2.20 | 0.084 | 0.088 |
2506261420_R-O-BAS316_C7502720.pdf
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