Built-in bias resistor PNP digital transistor ROHM DTA143TU3T106 designed for simplified inverter and driver circuits
Key Attributes
Model Number:
DTA143TU3T106
Product Custom Attributes
Current - Collector Cutoff:
500nA
DC Current Gain:
100@1mA,5V
Emitter-Base Voltage VEBO:
5V
Operating Temperature:
-55℃~+150℃
Current - Collector(Ic):
100mA
Type:
PNP
Transition Frequency(fT):
250MHz
Input Resistor:
4.7kΩ
Vce Saturation(VCE(sat)):
300mV@250uA,5mA
Number:
-
Pd - Power Dissipation:
200mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTA143TU3T106
Package:
SOT-323
Product Description
Product Overview
The DTA143T series is a PNP digital transistor with a built-in biasing resistor, designed for simplified circuit configuration. These transistors eliminate the need for external input resistors, enabling straightforward inverter circuit designs. By focusing solely on on/off conditions, the DTA143T series facilitates easy circuit design and is suitable for applications such as inverters, interfaces, and drivers. Complementary NPN types are also available in the DTC143T series.
Product Attributes
- Brand: ROHM
- Product Type: PNP Digital Transistor (Bias Resistor Built-in Transistor)
Technical Specifications
| Model | Package | Package Size | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Input Resistance (R1) | Power Dissipation (PD*) | Marking |
|---|---|---|---|---|---|---|---|
| DTA143TM | SOT-723 | 1212 | -50V | -100mA | 4.7k (Typ. 3.29k - 6.11k) | 150mW | 93 |
| DTA143TEB | SOT-416FL | 1616 | -50V | -100mA | 4.7k (Typ. 3.29k - 6.11k) | 150mW | 93 |
| DTA143TE | SOT-416 | 1616 | -50V | -100mA | 4.7k (Typ. 3.29k - 6.11k) | 150mW | 93 |
| DTA143TUB | SOT-323FL | 2021 | -50V | -100mA | 4.7k (Typ. 3.29k - 6.11k) | 200mW | 93 |
| DTA143TU3 | SOT-323 | 2021 | -50V | -100mA | 4.7k (Typ. 3.29k - 6.11k) | 200mW | 93 |
| DTA143TKA | SOT-346 | 2928 | -50V | -100mA | 4.7k (Typ. 3.29k - 6.11k) | 200mW | 93 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | IC = -50A | -50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = -1mA | -50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = -50A | -5 | - | - | V |
| Collector cut-off current | ICBO | VCB = -50V | - | - | -500 | nA |
| Emitter cut-off current | IEBO | VEB = -4V | - | - | -500 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC = -5mA, IB = -0.25mA | - | - | -300 | mV |
| DC current gain | hFE | VCE = -5V, IC = -1mA | 100 | 250 | 600 | - |
| Transition frequency | fT*2 | VCE = -10V, IE = 5mA, f = 100MHz | - | 250 | - | MHz |
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
Applications
- INVERTER
- INTERFACE
- DRIVER
2211141030_ROHM-DTA143TU3T106_C5252700.pdf
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