Power Conversion Diode REASUNOS RSS40120K Silicon Carbide Schottky with Low Forward Recovery Voltage
Key Attributes
Model Number:
RSS40120K
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@1200V
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
Common Cathode
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.55V@20A
Current - Rectified:
-
Mfr. Part #:
RSS40120K
Package:
TO-247-3
Product Description
Product Overview
The RSS40120K is a Silicon Carbide Schottky Diode designed for high-performance power applications. It offers zero reverse recovery current and zero forward recovery voltage, leading to temperature-independent switching and reduced switching losses. Its positive temperature coefficient on VF and 175C operating junction temperature make it suitable for demanding environments. This unipolar device can replace bipolar components, enabling smaller heatsinks and parallel operation without thermal runaway.
Product Attributes
- Brand: Reasunos
- Material: Silicon Carbide
- Product Type: Schottky Diode
- Part Number: RSS40120K
- Package: TO-247-3
- Marking: RSS40120K
- Packing: Tube (30 PCS)
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
| VRRM | Repetitive Peak Reverse Voltage | 1200 | V | TC = 25 | |
| VRSM | Surge Peak Reverse Voltage | 1200 | V | TC = 25 | |
| VR | DC Blocking Voltage | 1200 | V | TC = 25 | |
| IF | Forward Current | 52*2 | A | TC 25 | |
| 24*2 | TC 135 | ||||
| 20*2 | TC 146 | ||||
| IFRM | Repetitive Peak Forward Surge Current | 180*2 | A | TC = 25, tp =8.3ms, Half Sine Wave | |
| Ptot | Power Dissipation | 230*2 | W | TC = 25 | Fig.3 |
| TC | Maximum Case Temperature | 146 | |||
| TJ,TSTG | Operating Junction and Storage Temperature | -55 to175 | |||
| VF | Forward Voltage | 1.55 | V | IF = 20A, TJ = 25 | Fig.1 |
| 1.8 | IF = 20A, TJ = 175 | Fig.1 | |||
| IR | Reverse Current | 5 | A | VR = 1200V, TJ = 25 | Fig.2 |
| 20 | VR = 1200V, TJ = 175 | Fig.2 | |||
| C | Total Capacitance | 1280 | pF | VR = 1V, TJ = 25, f = 1MHz | Fig.5 |
| 77 | VR = 800V, TJ = 25, f = 1MHz | Fig.5 | |||
| QC | Total Capacitive Charge | 51 | nC | VR =800V, | Fig.4 |
| RJC | Thermal Resistance from Junction to Case | 0.65 | /W | Fig.6 |
2406111712_REASUNOS-RSS40120K_C7465284.pdf
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