AEC Q101 Certified Super Fast Recovery Diode ROHM RFN1LAM6STFTR Silicon Planar Type for Rectification

Key Attributes
Model Number: RFN1LAM6STFTR
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
15A
Reverse Leakage Current (Ir):
1uA@600V
Reverse Recovery Time (trr):
25ns
Voltage - DC Reverse (Vr) (Max):
600V
Operating Junction Temperature Range:
-
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.15V@800mA
Current - Rectified:
800mA
Mfr. Part #:
RFN1LAM6STFTR
Package:
SOD-128
Product Description

Product Overview

The ROHM RFN1LAM6STF is a Super Fast Recovery Diode, AEC-Q101 Qualified, designed for general rectification applications. It features low forward voltage and low switching loss, making it suitable for various electronic circuits requiring efficient and fast diode performance.

Product Attributes

  • Brand: ROHM
  • Series: RFN1LAM6STF
  • Certification: AEC-Q101 Qualified
  • Construction: Silicon epitaxial planar type
  • Type: Super Fast Recovery Diode

Technical Specifications

ParameterConditionsMin.Typ.Max.Unit
Repetitive peak reverse voltageVRM600V
Reverse voltageVR150V
Junction temperatureTj-55+150C
Storage temperatureTstg-55+150C
Forward voltageIF=0.5A0.81.15V
Reverse currentVR=600V1A
Reverse recovery timeIF=0.8A, IR=1A, Irr=0.25IR2535ns
Thermal resistanceRth(j-l) Junction to lead25C/W
Non-repetitive forward surge currentIFSM 60Hz half sin wave, 1 cycle15A
Average forward rectified currentIo Glass epoxy board mounted, 60Hz half sin wave, resistive load0.8A

2109182030_ROHM-RFN1LAM6STFTR_C509973.pdf

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