Power Factor Correction Silicon Carbide Diode REASUNOS RSS08065G with High Speed Switching Capabilities

Key Attributes
Model Number: RSS08065G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
75A
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.7V@8A
Reverse Leakage Current (Ir):
20uA@650V
Current - Rectified:
8A
Mfr. Part #:
RSS08065G
Package:
PDFN-8(5x6)
Product Description

Reasunos RSS08065G Silicon Carbide Schottky Diode

The Reasunos RSS08065G is a Silicon Carbide Schottky Diode designed for high-performance applications such as Power Factor Correction, Server Mode Power Supplies, and Uninterruptible Power Supplies. It features a low forward voltage drop, high-speed switching capabilities, and a positive temperature coefficient, ensuring temperature-independent switching behavior.

Product Attributes

  • Brand: Reasunos
  • Material: Silicon Carbide
  • Origin: China (implied by copyright and company name)

Technical Specifications

Part Number Package Marking Packing Qty. VRRM (V) IF (A) @ TC=120 QC (nC) Repetitive Peak Reverse Voltage (V) Surge Peak Reverse Voltage (V) DC Blocking Voltage (V) Forward Current (A) Non-Repetitive Forward Surge Current (A) Non-Repetitive Peak Forward Surge Current (A) Repetitive Peak Forward Surge Current (A) Power Dissipation (W) Operating Junction and Storage Temperature (C) Forward Voltage (V) Reverse Current (A) Total Capacitance (pF) Total Capacitive Charge (nC) Capacitance Stored Energy (J) Thermal Resistance Junction to Case (C/W)
RSS08065G PDFN5X6 RSS08065G 5000 PCS 650 8 22 650 650 650 8 (TC=120) 75 (TC=25, tp=10ms) 680 (TC=25, tP=10s) 60 (TC=25, tp=10ms) 117 (TC=25), 51 (TC=110) -55 to 175 1.40 (Typ., IF=8A, TJ=25), 1.70 (Max., IF=8A, TJ=25), 1.70 (Typ., IF=8A, TJ=175), 2.00 (Max., IF=8A, TJ=175) 1 (Typ., VR=650V, TJ=25), 20 (Max., VR=650V, TJ=25), 20 (Typ., VR=650V, TJ=175), 200 (Max., VR=650V, TJ=175) 440 (Typ., VR=0V, TJ=25, f=1MHz), 44 (Typ., VR=200V, TJ=25, f=1MHz), 38 (Typ., VR=400V, TJ=25, f=1MHz) 22 (VR=400V, IF=10A, TJ=25) 5.8 (VR=400V) 1.75 (Typ.)

2509121150_REASUNOS-RSS08065G_C51904722.pdf

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