Power switching diode REASUNOS RSS08065A Silicon Carbide Schottky with zero forward recovery voltage
Key Attributes
Model Number:
RSS08065A
Product Custom Attributes
Reverse Leakage Current (Ir):
6uA@650V
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.39V@8A
Current - Rectified:
25A
Mfr. Part #:
RSS08065A
Package:
TO-220-2
Product Description
Product Overview
The Reasunos RSS08065A is a Silicon Carbide Schottky Diode designed for high-efficiency power applications. It features zero reverse recovery current and zero forward recovery voltage, contributing to temperature-independent switching and reduced switching losses. This unipolar device offers a positive temperature coefficient on VF, enabling parallel operation without thermal runaway and allowing for smaller heatsink sizes. With a high operating junction temperature of 175C, it is suitable for demanding applications.
Product Attributes
- Brand: Reasunos
- Material: Silicon Carbide
- Package: TO-220-2
- Origin: China (implied by company name and location)
Technical Specifications
| Part Number | VRRM (V) | IF (A) | QC (nC) | VF (V) | IR (A) | CT (pF) | RJC (/W) | Max Case Temp () | Operating Temp () |
|---|---|---|---|---|---|---|---|---|---|
| RSS08065A | 650 | 11 (TC135) | 23 | 1.39 (Typ., IF=8A, TJ=25) 1.74 (Max., IF=8A, TJ=25) 1.6 (Typ., IF=8A, TJ=175) | 6 (Typ., VR=650V, TJ=25) 60 (Max., VR=650V, TJ=25) 12 (Typ., VR=650V, TJ=175) | 338 (Typ., VR=1V, TJ=25, f=1MHz) 44 (Typ., VR=200V, TJ=25, f=1MHz) 43 (Typ., VR=400V, TJ=25, f=1MHz) | 1.495 (Typ.) | 154 | -55 to 175 |
2306121020_REASUNOS-RSS08065A_C5371980.pdf
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