Low Drive Current Silicon N Channel MOS FET RENESAS RQK0204TGDQATL-H Designed for Power Switching Solutions
Key Attributes
Model Number:
RQK0204TGDQATL-H
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Output Capacitance(Coss):
33pF
Input Capacitance(Ciss):
127pF
Pd - Power Dissipation:
800mW
Gate Charge(Qg):
1.5nC@5V
Mfr. Part #:
RQK0204TGDQATL-H
Package:
SC-59A
Product Description
RQK0204TGDQA Silicon N Channel MOS FET Power Switching
The RQK0204TGDQA is a silicon N-channel MOS FET designed for power switching applications. It features low on-resistance, low drive current, high-speed switching, and is compatible with 2.5 V gate drive. This device is suitable for various electronic applications requiring efficient power management.
Product Attributes
- Brand: RENESAS
- Package Code: PLSP0003ZB-A
- Package Name: MPAK
- Marking: TG
Technical Specifications
| Item | Symbol | Min | Typ | Max | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | 20 | V | |||
| Gate to source voltage | VGSS | 12 | V | |||
| Drain current | ID | 2.3 | A | |||
| Drain peak current | ID(pulse) | 8.0 | A | PW 10 s, duty cycle 1% | ||
| Body - drain diode reverse drain current | IDR | 2.3 | A | |||
| Channel dissipation | Pch | 0.8 | W | When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) | ||
| Channel temperature | Tch | 150 | C | |||
| Storage temperature | Tstg | 55 | +150 | C | ||
| Drain to source breakdown voltage | V(BR)DSS | 20 | V | ID = 10 mA, VGS = 0 | ||
| Gate to source breakdown voltage | V(BR)GSS | 12 | V | IG = 100 A, VDS = 0 | ||
| Gate to source leak current | IGSS | 10 | A | VGS = 10 V, VDS = 0 | ||
| Drain to source leak current | IDSS | 1 | A | VDS = 20 V, VGS = 0 | ||
| Gate to source cutoff voltage | VGS(off) | 0.4 | 1.4 | V | VDS = 10 V, ID = 1 mA | |
| Drain to source on state resistance | RDS(on) | 100 | 130 | m | ID = 1.2 A, VGS = 4.5 V | |
| Drain to source on state resistance | RDS(on) | 146 | 204 | m | ID = 1.2 A, VGS = 2.5 V | |
| Forward transfer admittance | |yfs| | 1.5 | 3.0 | S | ID = 1.2 A, VDS = 10 V | |
| Input capacitance | Ciss | 127 | pF | VDS = 10 V, VGS = 0, f = 1 MHz | ||
| Output capacitance | Coss | 33 | pF | VDS = 10 V, VGS = 0, f = 1 MHz | ||
| Reverse transfer capacitance | Crss | 14 | pF | VDS = 10 V, VGS = 0, f = 1 MHz | ||
| Turn - on delay time | td(on) | 11 | ns | ID = 1.2 A, VGS = 10 V, RL = 8.3 , Rg = 4.7 | ||
| Rise time | tr | 28 | ns | ID = 1.2 A, VGS = 10 V, RL = 8.3 , Rg = 4.7 | ||
| Turn - off delay time | td(off) | 24 | ns | ID = 1.2 A, VGS = 10 V, RL = 8.3 , Rg = 4.7 | ||
| Fall time | tf | 7 | ns | ID = 1.2 A, VGS = 10 V, RL = 8.3 , Rg = 4.7 | ||
| Total gate charge | Qg | 1.5 | nC | VDD = 10 V, VGS = 5 V, ID = 2.3 A | ||
| Gate to source charge | Qgs | 0.3 | nC | VDD = 10 V, VGS = 5 V, ID = 2.3 A | ||
| Gate to drain charge | Qgd | 0.4 | nC | VDD = 10 V, VGS = 5 V, ID = 2.3 A | ||
| Body - drain diode forward voltage | VDF | 0.85 | 1.1 | V | IF = 2.3 A, VGS = 0 |
2205111530_RENESAS-RQK0204TGDQATL-H_C3014315.pdf
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